HAF3861BIN, HAF70009, HAFO11513.30 Selling Leads, Datasheet
MFG:INTERSIL Package Cooled:200 D/C:03+04+
HAF3861BIN, HAF70009, HAFO11513.30 Datasheet download

Part Number: HAF3861BIN
MFG: INTERSIL
Package Cooled: 200
D/C: 03+04+
MFG:INTERSIL Package Cooled:200 D/C:03+04+
HAF3861BIN, HAF70009, HAFO11513.30 Datasheet download

MFG: INTERSIL
Package Cooled: 200
D/C: 03+04+
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PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HAF70009
File Size: 110238 KB
Manufacturer: INTERSIL [Intersil Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: HAF1001
File Size: 55192 KB
Manufacturer: HITACHI [Hitachi Semiconductor]
Download : Click here to Download
This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators,switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75639.
|
Item |
Symbol |
HAF70009 |
Units |
| Drain to Source Voltage (Note 1) |
VDSS |
100 |
V |
| Drain to Gate Voltage (RGS = 20k)(Note 1) |
VGR |
100 |
V |
| Gate to Source Voltage |
VGS |
±20 |
V |
| Drain Current Continuous (Figure 2) |
ID |
56 |
A |
| Pulsed Drain Current |
IDM |
Figure 4 |
|
| Pulsed Avalanche Rating |
EAS |
Figures 6,14,15 |
|
| Power Dissipation |
PD |
200 |
W |
| Derate Above 25 |
- |
1.35 |
W/ |
| Operating and Storage Temperature |
TJ,TSTG |
-55 to 175 |
|
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s |
TL |
300 |
|
| Package Body for 10s, See Tech Brief 334 |
TSTG |
260 |
|
