HFB35HB20, HFB35HB20C, HFB423226 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-254AA D/C:00+
HFB35HB20, HFB35HB20C, HFB423226 Datasheet download
Part Number: HFB35HB20
MFG: IR
Package Cooled: TO-254AA
D/C: 00+
HFB35HB20, HFB35HB20C, HFB423226
- Table of contents:
Info of HFB35HB20
Info of HFB35HB20C
Info of HFB423226
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About HFB35HB20
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Datasheet: HFB35HB20
File Size: 106662 KB
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About HFB35HB20C
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Datasheet: HFB35HB20C
File Size: 107825 KB
Manufacturer: IRF [International Rectifier]
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About HFB06PB120
PDF/DataSheet Download
Datasheet: HFB06PB120
File Size: 192850 KB
Manufacturer: IRF [International Rectifier]
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HFB35HB20 General Description
The HFB35HB20 has four features.The first one is reduced RFI and EMI.The second one is reduced snubbing.The third one is extensive characterization of recovery parameters.The fourth one is hermetic.
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
The HFB35HB20 has some absolute maximum ratings.When parameter is cathode-to-anode voltage,the symbol is VR,the Max.is 200,the units is V.When parameter is continuous forward current,TC = 80,the symbol is IF(AV),the Max.is 35,the units is A.When parameter is single pulse forward current,Tc=25,the symbol is IFSM,the Max.is 150,the units is A.When parameter is maximum power dissipation,the symbol is PD @ TC = 25,the Max.is 125,the units is W.When parameter is operating junction and storage temperature range,the symbol is TJ,TSTG,the Max.is -55 to +150,the units is .
HFB35HB20 Maximum Ratings
| Parameter |
Max. |
Units | |
|
VR |
D.C. Reverse VoltageTC = 80°C |
200 |
V |
|
IF(AV) |
Continuous Forward Current TC = 25°C |
35 |
A |
|
IFSM |
Single Pulse Forward Current ‚ |
150 | |
|
PD @ TC = 25°C |
Maximum Power Dissipation |
125 |
W |
|
TJ,TSTG |
Operating Junction andStorage Temperature Range |
-55 to +150 |
°C |
HFB35HB20 Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
HFB35HB20 Connection Diagram
HFB35HB20C General Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.
HFB35HB20C Maximum Ratings
| Parameter | Max | Units | |
| VR | Cathode to Anode Voltage ( Per Leg ) | 200 | V |
| IF(AV) | Continuous Forward Current, TC =108 °C | 35 | A |
| IFSM | Single Pulse Forward Current, TC = 25°C ( Per Leg ) | 150 | |
| PD @ TC = 25°C | Maximum Power Dissipation | 90 | W |
| TJ,TSTG | Operating Junction andStorage Temperature Range | -55 to +150 | °C |
HFB35HB20C Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
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