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HGT1S20N36G3VLS, HGT1S20N60A4S9A, HGT1S20N60B3S

Table of contents:
Info of HGT1S20N36G3VLS
Info of HGT1S20N60A4S9A
Info of HGT1S20N60B3S

HGT1S20N36G3VLS, HGT1S20N60A4S9A, HGT1S20N60B3S Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:. D/C:06+

HGT1S20N36G3VLS, HGT1S20N60A4S9A, HGT1S20N60B3S Datasheet download

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Part Number: HGT1S20N60A4S9A

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: .

D/C: 06+

Description: IGBT SMPS N-CHAN 600V TO-263AB

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HGT1S20N60A4S9A Parameters

Technical/Catalog Information	HGT1S20N60A4S9A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Input Type	Standard
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	70A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 20A
Power - Max	290W
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	HGT1S20N60A4S9A HGT1S20N60A4S9A

HGT1S20N60A4S9A General Description

The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150.

This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.

Formerly Developmental Type TA49339.

HGT1S20N60A4S9A Maximum Ratings

                                                                                                                    HGT1S20N60A4S9A                         UNITS
Collector to Emitter Voltage . . . . . . . . . . . . .                         BV_CES600                                          V
Collector Current Continuous
At T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . .                        I_C2570                                             A
At T_C = 110 . . . . . . . . . . . . . . . . . . . . . . . .                         I_C11040                                              A
Collector Current Pulsed (Note 1) . . . . . . . . . . .                        I_CM280                                            A
Gate to Emitter Voltage Continuous.                                         V_GES±20                                           V
Gate to Emitter Voltage Pulsed . . .   . . . . . . .                           V_GEM±30                                           V
Switching Safe Operating Area at T_J = 150 (Figure 2) . . . . . SSOA
100A at 600V
Power Dissipation Total at T_C = 25 . . . . . . . .   . . . . . . . . . . . . P_D290                                           W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . .                              2.32                                         W/
Operating and Storage Junction Temperature Range . . . . . T_J, T_STG-55 to 150
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . T_L300
Package Body for 10s, See Tech Brief 334 . . . . . . . . . . . . . . . . T_PKG260
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.

HGT1S20N60A4S9A Features

•>100kHz Operation at 390V, 20A
•200kHz Operation at 390V, 12A
•600V Switching SOA Capability
•Typical Fall Time. . . . . . . . . . . . . . . . . 55ns at T_J = 125
•Low Conduction Loss
•Temperature Compensating SABER™ Model www.intersil.com
•Related Literature
- TB334 "Guidelines for Soldering Surface Mount
Components to PC Boards

HGT1S20N60B3S General Description

The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 and 150.

The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Formerly developmental type TA49050.

HGT1S20N60B3S Maximum Ratings

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector to Gate Voltage, RGE = 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . .BVCGR 600 V
Collector Current Continuous
At TC= 25. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 40 A
At TC= 110. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 20A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ= 150 (Figure 2) . . . . . . . . .SSOA 30A at 600V
Power Dissipation Total at TC= 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. PD 165 W
Power Dissipation Derating TC> 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . .. .1.32 W/
Operating and Storage Junction Temperature Range . . . . . . . . . TJ, TSTG -40 to 50
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . .. TL300
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 260
Short Circuit Withstand Time (Note 2) at VGE= 15V . . . . . . . . . . . . . . . . . . tSC 4µs
Short Circuit Withstand Time (Note 2) at VGE= 12V . . . . . . . . . . . . . . . . . . . tSC 10µs

HGT1S20N60B3S Features

• 40A, 600V at TC = 25
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
- TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"

HGT1S20N60B3S Connection Diagram

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