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HGTC-8MG-1, HGTD10N40F1, HGTD10N40F1S

HGTC-8MG-1, HGTD10N40F1, HGTD10N40F1S Selling Leads, Datasheet

MFG:MIT  Package Cooled:TO-251  D/C:95

HGTC-8MG-1, HGTD10N40F1, HGTD10N40F1S Picture

HGTC-8MG-1, HGTD10N40F1, HGTD10N40F1S Datasheet download

Five Points

Part Number: HGTC-8MG-1

 

MFG: MIT

Package Cooled: TO-251

D/C: 95

 

 

 
 
 
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  • HGT1S3N60

  • Vendor: Fairchild D/C: 06+& Qty: TO263  Adddate: 2024-04-29
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About HGT1N30N60A4D

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Datasheet: HGT1N30N60A4D

File Size: 147560 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • HGT1S3N60

  • Vendor: Fairchild D/C: 06+& Qty: TO263  Adddate: 2024-04-29
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  • HGT1Y40N60B3D

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About HGTD10N40F1

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Datasheet: HGTD10N40F1

File Size: 33867 KB

Manufacturer: INTERSIL [Intersil Corporation]

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  • HGT1S3N60

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  • RUIFENG   China
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    Tel: 086-0755-23815723
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  • HGT1S7N60

  • Vendor: Fairchild D/C: 04+& Qty: TO263  Adddate: 2024-04-29
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  • RUIFENG   China
    Contact: Ms.Miss Lin  
    Tel: 086-0755-23815723
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  • Vendor: Fairchild D/C: 03+& Qty: TO3PL  Adddate: 2024-04-29
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    (1)

About HGTD10N40F1S

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Datasheet: HGTD10N40F1S

File Size: 33867 KB

Manufacturer: INTERSIL [Intersil Corporation]

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HGTD10N40F1 General Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.

HGTD10N40F1 Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .   VCES 400 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .   VCGR 400 500 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  . VGE ±20 ±20 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC25 12 12 A
Collector Current Continuous at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC90 10 10 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  PD 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .  .TJ, TSTG -55 to +150 -55 to +150

HGTD10N40F1 Features

• 10A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL £1.4ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance

HGTD10N40F1 Typical Application

• Power Supplies
• Motor Drives
• Protective Circuits

HGTD10N40F1 Connection Diagram

HGTD10N40F1S General Description

The HGTD10N40F1, HGTD10N40F1S, HGTD10N50F1, and HGTD10N50F1S are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low power integrated circuits.

HGTD10N40F1S Maximum Ratings

Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .   VCES 400 500 V
Collector-Gate Voltage RGE = 1MW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .   VCGR 400 500 V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  . VGE ±20 ±20 V
Collector Current Continuous at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC25 12 12 A
Collector Current Continuous at TC = +90 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  IC90 10 10 A
Power Dissipation Total at TC = +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  .  .  PD 75 75 W
Power Dissipation Derating TC > +25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  .  .  0.6 0.6 W/
Operating and Storage Junction Temperature Range . . . . . . . . . . . . .  .TJ, TSTG -55 to +150 -55 to +150

HGTD10N40F1S Features

• 10A, 400V and 500V
• VCE(ON) 2.5V Max.
• TFALL £1.4ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance

HGTD10N40F1S Typical Application

• Power Supplies
• Motor Drives
• Protective Circuits

HGTD10N40F1S Connection Diagram

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