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HGTP12N6OC3D_R4900, HGTP14N37G3VL, HGTP14N40F3V

Table of contents:
Info of HGTP12N6OC3D_R4900
Info of HGTP14N37G3VL
Info of HGTP14N40F3V

HGTP12N6OC3D_R4900, HGTP14N37G3VL, HGTP14N40F3V Selling Leads, Datasheet

MFG:FSC Package Cooled:N/A D/C:2009+

HGTP12N6OC3D_R4900, HGTP14N37G3VL, HGTP14N40F3V Picture

HGTP12N6OC3D_R4900, HGTP14N37G3VL, HGTP14N40F3V Datasheet download

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Part Number: HGTP12N6OC3D_R4900

MFG: FSC

Package Cooled: N/A

D/C: 2009+

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HGTP14N37G3VL General Description

This N-Channel IGBT is a MOS gated, logic level device which is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped Inductive Switching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resister are provided in the gate circuit.

Formerly Developmental Type TA49169.

HGTP14N37G3VL Maximum Ratings

Collector to Emitter Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . .BV_CER 380 V
Emitter to Collector Breakdown Voltage at 10mA . . . . . . . . . . . . . . . . . . . . . . . . . .BV_ECS 24 V
Collector Current Continuous at V_GE = 5V, T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . .I_C2525 A
Collector Current Continuous at V_GE = 5V, T_C = 110 . . . . . . . . . . . . . . . . . . . . . .I_C110 18 A
Gate to Emitter Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GEM ±10 V
Inductive Switching Current at L = 3mH, T_C = 25. . . . . . . . . . . . . . . . . . . . . . . . . I_SCIS 15 A
Inductive Switching Current at L = 3mH, T_C = 150. . . . . . . . . . . . . . . . . . . . . . I_SCIS 11.5 A
Collector to Emitter Avalanche Energy at L = 3 mH, T_C = 25 . . . . . . . . . . . . . . . E_AS 340 mJ
Power Dissipation Total at T_C = 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D 136 W
Power Dissipation Derating T_C > 25 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.91 W/
Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_STG-55 to 175
Operating Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J -55 to 175
Electrostatic Voltage HBM at 250pF, 1500Ω All Pin Configurations. . . . . . . . . . . . . . . E_SD 5 kV
Electrostatic Voltage MM at 200pF, 0Ω All Pin Configurations. . . . . . . . . . . . . . . . . . . E_SD 2 kV
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L 300
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. T_PKG 260

HGTP14N37G3VL Features

• Logic Level Gate Drive
• Internal Voltage Clamp
• ESD Gate Protection
• T_J = 175
• Internal Series and Shunt Gate Resistors
• Low Conduction Loss
• Ignition Energy Capable

HGTP14N37G3VL Connection Diagram

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