HGTP7N60B, HGTP7N60B3D, HGTP7N60B3D_NL
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Datasheet: HGTP7N60B3
File Size: 95124 KB
Manufacturer: INTERSIL [Intersil Corporation]
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Datasheet: HGTP7N60B3D
File Size: 96586 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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Datasheet: HGT1N30N60A4D
File Size: 147560 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
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HGTP7N60B3D Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .. .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . IC110 Average Rectified Forward Current at TC = 152oC . . . . . . . . . . . IF(AV) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . .. .. . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . .VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . .tSC
HGTP7N60B3D Features
• 14A, 600V, TC = 25oC • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Hyperfast Anti-Parallel Diode
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