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HMJE13005-700V4A, HMJE13005-B3, HMJE13007A

Table of contents:
Info of HMJE13005-700V4A
Info of HMJE13005-B3
Info of HMJE13007A

HMJE13005-700V4A, HMJE13005-B3, HMJE13007A Selling Leads, Datasheet

MFG:HSMC Package Cooled:TO220 D/C:08+

HMJE13005-700V4A, HMJE13005-B3, HMJE13007A Picture

HMJE13005-700V4A, HMJE13005-B3, HMJE13007A Datasheet download

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Part Number: HMJE13005-700V4A

MFG: HSMC

Package Cooled: TO220

D/C: 08+

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HMJE13005-B3 General Description

The HMJE13005-B3 belongs to the HMJE13005 series. It is a kind of NPN epitaxial planar silicon transistor which is made by the MICROELECTRONICS CORP. It is available in the TO-220 package. It can be used in switch regulators,PWM inverters and motor controls,solenoid and relay drivers and deflection circuits.

The following is the description about its absolute maximum ratings at TA is 25 . (1): storage temperature is from -55 to 150 and the maximum junction temperature is 150 ; (2): total power dissipation is 75 W when TC is 25 ; (3): collector to emitter voltage(VCEX) is 700 V and collector to emitter voltage(VCEO) is 400 V,emitter to base voltage(VEBO) is 9 V; (4): IC collector current is 4 A and IB base current is 2 A; (5): the minimum BVCEX is 700 V when IC is 1 mA and VEB is 1.5 V ; (6): the minimum BVCEO is 400 V when IC is 10 mA ; (7): the maximum IEBO is 1 mA when VEB is 9 V,ICEX is 1 mA at VCE is 700 V and VBE is 1.5 V; (8): the maximum VCE(sat) is 500 mV at the condition of IC is 1 A and IB is 200 mA; (9): the typical ton is 0.6 s and the maximum is 0.8 s ,the typical ts is 2.9 s and the maximum is 4 s when VCC is 125 V,IC is 2 A and IB1 is 0.4 A. If you want to know more information about the HMJE13005-B3 ,please download the datasheet at www.seekic.com.

HMJE13007A General Description

• High Voltage, High Speed Power Switch
• Switch Regulators
• PWM Inverters and Motor Controls
• Solenoid and Relay Drivers
• Deflection Circuits

HMJE13007A Maximum Ratings

• Maximum Temperatures
Storage Temperature ........................................................................................................................... -50 ~ +150
Junction Temperature ..................................................................................................................... 150 Maximum
• Maximum Power Dissipation
Total Power Dissipation (T_C=25) .................................................................................................................... 80 W
• Maximum Voltages and Currents (T_A=25)
V_CBO Collector to Emitter Voltage ...................................................................................................................... 700 V
V_CEO Collector to Emitter Voltage ...................................................................................................................... 400 V
V_EBOEmitter to Base Voltage ............................................................................................................................... 9 V
I_C Collector Current ........................................................................................................................... Continuous 8 A
I_B Base Current ................................................................................................................................. Continuous 4 A

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