HMJ4

Product :
RF Frequency :
IF Frequency :
LO Frequency :
Power Gain :
P1dB :
Operating Supply Current :
Maximum Power Dissipation :
Maximum Operating Temperature : + 85 C
Mounting Style : SMD/SMT
Operating Supply Voltage : 3 V
Package / Case : SMD


Features:

• +36 dBm IIP3
• No External Matching Elements Required
• RF 1700-1880 MHz
• LO 1550-1830 MHz
• IF 50-150 MHz
• +17 dBm Drive Level
• +3V Bias (18 mA)
• Low Cost Surface Mount J-Lead Package



Specifications

Parameter	Rating
Operating Case Temperature	-40 to +85
Storage Temperature	-65 to +100
Maximum Input Power	25 dBm

1. Operation of this device above any of these parameters may cause
    permanent damage.
2. Total sum of LO port and RF port power should not exceed 25 dBm.


Description

The HMJ4 is a high dynamic range, GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +36 dBm at an LO drive level of +17 dBm. It comes in a low cost, J-lead package. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in communications systems.