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IHW15N120R2, IHW15T120, IHW20N120R

Table of contents:
Info of IHW15N120R2
Info of IHW15T120
Info of IHW20N120R

IHW15N120R2, IHW15T120, IHW20N120R Selling Leads, Datasheet

MFG:INFINEON Package Cooled:TO-247 D/C:08+

IHW15N120R2, IHW15T120, IHW20N120R Picture

IHW15N120R2, IHW15T120, IHW20N120R Datasheet download

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Part Number: IHW15N120R2

MFG: INFINEON

Package Cooled: TO-247

D/C: 08+

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IHW15N120R2 Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	1200	V
DC collector current TC = 25°C TC = 100°C	I_C	30 15	A
Pulsed collector current, tp limited by Tjmax	I_Cpuls	45
Turn off safe operating area (VCE 1200V, Tj 175°C)		45
Diode forward current TC = 25°C TC = 100°C	I_F	30 15
Diode pulsed current, tp limited by Tjmax	I_Fpuls	45
Diode surge non repetitive current, tp limited by Tjmax TC = 25°C, tp = 10ms, sine halfwave TC = 25°C, tp 2.5µs, sine halfwave TC = 100°C, tp 2.5µs, sine halfwave	I_FSM	50 130 120
Gate-emitter voltage Transient Gate-emitter voltage (tp < 5 ms)	V_GE	±20 ±25	V
Power dissipation TC = 25°C	P_tot	357	W
Operating junction temperature	T_j	-40...+175	°C
Storage temperature	T_stg	-55...+175	°C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s		260	°C
Mounting Torque	Ms	0.6	Nm

IHW15N120R2 Features

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models

IHW15N120R2 Typical Application

• Inductive Cooking
• Soft Switching Applications

IHW20N120R Maximum Ratings

Parameter	Symbol	Value	Unit
Collector-emitter voltage	V_CE	1200	V
DC collector current, limited by T_jmax T_C = 25 T_C = 100	I_C	40 20	A
Pulsed collector current, tp limited by T_jmax	I_{Cpul s}	60
Turn off safe operating area (V_CE 1200V, T_j 175)	-	60
Diode forward current T_C= 25 T_C = 100	I_F	20 13
Diode pulsed current, tp limited by T_jmax	I_Fpuls	30
iode surge non repetitive current, tp limited by T_jmaxT_C = 25,tp= 10ms, sine lfwave T_C = 25, tp 2.5µs, sine halfwave T_C = 100, tp 2.5µs, sine halfwave	I_FSM	50 130 120
Gate-emitter voltage Transient Gate-emitter voltage (t_p < 5 ms)	V_GE	±20 ±25	V
Power dissipation T_C = 25	P_tot	357	W
Operating junction temperature	T_j	-40...+175
Storage temperature	T_stg	-55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s	-	260

IHW20N120R Features

• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to positive temperature coefficient in V_CE(sat)
• Low EMI
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

IHW20N120R Typical Application

• Inductive Cooking
• Soft Switching Applications

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