IKP03N120H2, IKP04N60T, IKP06N60 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:TO-220 D/C:08+
IKP03N120H2, IKP04N60T, IKP06N60 Datasheet download
Part Number: IKP03N120H2
MFG: INFINEON
Package Cooled: TO-220
D/C: 08+
IKP03N120H2, IKP04N60T, IKP06N60
- Table of contents:
Info of IKP03N120H2
Info of IKP04N60T
Info of IKP06N60
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About IKP03N120H2
PDF/DataSheet Download
Datasheet: IKP03N120H2
File Size: 441934 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About IKP03N120H2
PDF/DataSheet Download
Datasheet: IKP03N120H2
File Size: 441934 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
About IKP06N60T
PDF/DataSheet Download
Datasheet: IKP06N60T
File Size: 799292 KB
Manufacturer:
Download : Click here to Download
IKP03N120H2 Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 1200 | V |
| Triangular collector current TC = 25°C, f = 140kHz TC = 100°C, f = 140kHz |
IC | 9.6 3.9 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpu ls | 9.9 | A |
| Turn off safe operating area VCE 1200V, Tj 150°C |
- | 9.9 | A |
| Diode forward current TC = 25°C TC = 100°C |
IF | 9.6 3.9 |
|
| Gate-emitter voltage | VGE | ±20 | V |
| Power dissipation TC = 25°C |
Pt o t | 62.5 | W |
| Operating junction and storage temperature | Tj , Tstg | -40...+150 | °C |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 225 (for SMD) |
°C |
IKP03N120H2 Features
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
- SMPS
- Lamp Ballast
- ZVS-Converter
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
IKP04N60T Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current, limited by Tjmax TC = 25 TC = 100 |
IC | 8 4 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 12 | |
| Turn off safe operating area VCE 600V, Tj 175 | - | 12 | |
| Diode forward current TC = 25 TC = 100 |
IF | 4 8 |
|
| Diode pulsed current, tp limited by Tjmax | IFpuls | 12 | |
| Gate-emitter voltage | VGE | ±20 | V |
| Short circuit withstand time1) VGE = 15V, VCC 400V, Tj 150 |
tSC | 5 | |
| Power dissipation, TC = 25 | Ptot | 42 | W |
| Operating junction temperature | Tj | -40...+175 | |
| Storage temperature | Tstg | -55...+175 | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |
IKP04N60T Features
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175
• Short circuit withstand time 5s
• Designed for :
- Frequency Converters
- Drives
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
• Maximum Junction Temperature 175
• Short circuit withstand time 5s
• Designed for :
- Frequency Converters
- Drives
• Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel EmCon HE diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
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