IGBT Transistors LOW LOSS DuoPack 600V 4A
IKP04N60T: IGBT Transistors LOW LOSS DuoPack 600V 4A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
| Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
| Package / Case : | TO-220AB-3 | Packaging : | Tube |
| Parameter | Symbol | Value | Unit |
| Collector-emitter voltage | VCE | 600 | V |
| DC collector current, limited by Tjmax TC = 25 TC = 100 |
IC | 8 4 |
A |
| Pulsed collector current, tp limited by Tjmax | ICpuls | 12 | |
| Turn off safe operating area VCE 600V, Tj 175 | - | 12 | |
| Diode forward current TC = 25 TC = 100 |
IF | 4 8 |
|
| Diode pulsed current, tp limited by Tjmax | IFpuls | 12 | |
| Gate-emitter voltage | VGE | ±20 | V |
| Short circuit withstand time1) VGE = 15V, VCC 400V, Tj 150 |
tSC | 5 | |
| Power dissipation, TC = 25 | Ptot | 42 | W |
| Operating junction temperature | Tj | -40...+175 | |
| Storage temperature | Tstg | -55...+175 | |
| Soldering temperature, 1.6mm (0.063 in.) from case for 10s | - | 260 |