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IKP03N120H2

IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

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SeekIC No. : 00142881 Detail

IKP03N120H2: IGBT Transistors HIGH SPEED 2 TECH 1200V 3A

IKP03N120H2 Data Sheet

floor Price/Ceiling Price

US $ .92~1.84 / Piece | Get Latest Price
Part Number:
IKP03N120H2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~500
  • Unit Price
  • $1.84
  • $1.58
  • $1.18
  • $.92
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 1200 V
Maximum Gate Emitter Voltage : +/- 20 V Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-3 Packaging : Tube    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Package / Case : TO-220AB-3


Features:

• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A


Specifications

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz		 IC 9.6
3.9		 A
Pulsed collector current, tp limited by Tjmax ICpu ls 9.9 A
Turn off safe operating area
VCE 1200V, Tj 150°C		 - 9.9 A
Diode forward current
TC = 25°C
TC = 100°C		 IF 9.6
3.9		  
Gate-emitter voltage VGE ±20 V
Power dissipation
TC = 25°C		 Pt o t 62.5 W
Operating junction and storage temperature Tj , Tstg -40...+150 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260
225 (for SMD)		 °C



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