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The IR2121 is a high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output driver features a high pulse current buffer stage designed for minimum cross-conduction. The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle-by-cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting condition and latched shutdown. The output can be used to drive an N-channel power MOSFET or IGBT in the low side configuration.
IR2121 Maximum Ratings
Parameter
Value
Symbol
Definition
Min.
Max.
Units
VCC
Fixed Supply Voltage
-0.3
25
V
VS
Gate Drive Return Voltage
VCC - 25
VCC + 0.3
VO
Output Voltage
VS - 0.3
VCC + 0.3
VIN
Logic Input Voltage
-0.3
VCC + 0.3
VERR
Error Signal Voltage
-0.3
VCC + 0.3
VCS
Current Sense Voltage
VS - 0.3
VCC + 0.3
PD
Package Power Dissipation @ TA +25
-
1.0
W
RJA
Thermal Resistance, Junction to Ambient
-
125
/W
TJ
Junction Temperature
-
150
TS
Storage Temperature
-55
150
TL
Lead Temperature (Soldering, 10 seconds)
-
300
IR2121 Features
·Gate drive supply range from 12 to 18V ·Undervoltage lockout ·Current detection and limiting loop to limit driven power transistor current ·Error lead indicates fault conditions and programs shutdown time ·Output in phase with input