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The IR2152 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscillator which is similar to the 555 timer. The output drivers feature a high pulse current buffer stage and an internal deadtime designed for minimum driver cross-conduction. Propagation delays for the two channels are matched to simplify use in 50% duty cycle applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration that operates off a high voltage rail up to 600 volts.
IR2152 Maximum Ratings
Symbol
Definition
Min.
Max.
Units
VB
High Side Floating Supply Voltage
-0.3
625
V
VS
High Side Floating Supply Offset Voltage
VB - 25
VB + 0.3
VHO
High Side Floating Output Voltage
VS - 0.3
VB + 0.3
VLO
Low Side Output Voltage
-0.3
VCC + 0.3
VRT
RT Voltage
-0.3
VCC + 0.3
VCT
CT Voltage
-0.3
VCC + 0.3
ICC
Supply Current (Note 1)
-
25
mA
IRT
RT Output Current
-5
5
dVs/dt
Allowable Offset Supply Voltage Transient
-
50
V/ns
PD
Package Power Dissipation @ TA +25°C
(8 Lead DIP)
-
1.0
W
(8 Lead SOIC)
-
0.625
RJA
Thermal Resistance, Junction to Ambient
(8 Lead DIP)
-
125
/W
(8 Lead SOIC)
-
200
TJ
Junction Temperature
-
150
TS
Storage Temperature
-55
150
TL
Lead Temperature (Soldering, 10 seconds)
-
300
IR2152 Features
·Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ·Undervoltage lockout ·Programmable oscillator frequency ·Matched propagation delay for both channels ·Low side output in phase with RT