IRH7450, IRH7450SE, IRH8054 Selling Leads, Datasheet
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IRH7450, IRH7450SE, IRH8054 Datasheet download
Part Number: IRH7450
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IRH7450, IRH7450SE, IRH8054
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Info of IRH7450
Info of IRH7450SE
Info of IRH8054
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About IRH7450
PDF/DataSheet Download
Datasheet: IRH7450
File Size: 358981 KB
Manufacturer:
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About IRH7450SE
PDF/DataSheet Download
Datasheet: IRH7450SE
File Size: 149870 KB
Manufacturer: IRF [International Rectifier]
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About IRH8054
PDF/DataSheet Download
Datasheet: IRH8054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
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IRH7450 Maximum Ratings
| Parameter | Units | ||
|
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
11 |
A |
|
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
7.0 | |
|
IDM |
Pulsed Drain Current |
44 | |
|
PD @ TC = 25°C |
Max. Power Dissipation |
150 |
W |
| Linear Derating Factor |
1.2 |
W/°C | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
|
IAR |
Avalanche Current |
11 |
A |
|
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
3.5 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Lead Temperature |
300 (0.063 in. (1.6mm) from case for 10 sec.) | ||
| Weight |
11.5(Typical) |
g |
IRH7450 Features
·Radiatio·Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
IRH7450SE General Description
International Rectifier's (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the (SEE) process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuitsin space and weapons environments.
IRH7450SE Maximum Ratings
| Parameter | IRH7450SE | Units | |
| ID @ VGS =± 12V, TC = 25V | Continuous Drain Current | 20 | A |
| ID @ VGS =± 12V, TC = 100 | Continuous Drain Current | 12 | |
| IDM | Pulsed Drain Current | 80 | |
| PD @ TC = 25 | Max. Power Dissipation | 300 | W |
| Linear Derating Factor | 2.4 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 20 | A |
| EAR | Repetitive Avalanche Energy | 30 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Package Mounting Surface Temperature | 300 (0.0063 in. (1.6mm) from case for 10 sec.) | ||
| Weight | 11.5 (Typical) | g |
IRH7450SE Features
·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
· Ease of Paralleling
·Hermetically Sealed
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
· Ease of Paralleling
·Hermetically Sealed
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