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IRH7250SE

Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 26 A ID ...

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SeekIC No. : 004377941 Detail

IRH7250SE: Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Light WeightSpecifications ...

IRH7250SE Data Sheet

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Part Number:
IRH7250SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Ultra Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
26
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
16
IDM
 Pulsed Drain Current
104
PD @ TC = 25°C
 Max. Power Dissipation
150
W
 Linear Derating Factor
1.2
W/°C
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
500
mJ
IAR
 Avalanche Current
26
A
EAR
 Repetitive Avalanche Energy
15
mJ
dv/dt
 Peak Diode Recovery dv/dt
5.9
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight
11.5(Typical)
g
For footnotes refer to the last page


Description

International Rectifier's RADHardTM HEXFET® MOSFET technology IRH7250SE provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRH7250SE have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRH7250SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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