IRHF57230, IRHF58230, IRHF7230 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-205AF D/C:05+
IRHF57230, IRHF58230, IRHF7230 Datasheet download
Part Number: IRHF57230
MFG: IR
Package Cooled: TO-205AF
D/C: 05+
IRHF57230, IRHF58230, IRHF7230
- Table of contents:
Info of IRHF57230
Info of IRHF58230
Info of IRHF7230
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About IRHF57230
PDF/DataSheet Download
Datasheet: IRHF57230
File Size: 134468 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHF58230
PDF/DataSheet Download
Datasheet: IRHF58230
File Size: 134468 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHF7230
PDF/DataSheet Download
Datasheet: IRHF7230
File Size: 309649 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHF57230 Maximum Ratings
|
Parameter |
Max. |
Units | |
| ID @ VGS = 12V, TC = 25°C | Continuous Drain Current |
7.3 |
A |
| ID @ VGS = 12V, TC = 100°C | Continuous Drain Current |
4.5 | |
| IDM | Pulsed Drain Current |
29 | |
| PD @TA = 25°C | Max. Power Dissipation |
25 |
W |
| Linear Derating Factor |
0.2 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
110 |
mJ |
| IAR | Avalanche Current |
7.3 |
A |
| EAR | Repetitive Avalanche Energy |
2.5 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
7.0 |
V/ns |
|
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Weight |
0.98 (Typical) |
g |
IRHF57230 Features
·Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ultra Low RDS(on)
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
IRHF7230 General Description
International Rectifier's RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHF7230 Maximum Ratings
| Parameter | IRHF7230, IRHF8230 | Units | |
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 5.5 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 3.5 | |
| IDM | Pulsed Drain Current | 22 | |
| PD @ TC = 25 | Max. Power Dissipation | 25 | W |
| Linear Derating Factor | 0.2 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 240 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10s | ||
| Weight | 0.98 (Typical) | g |
IRHF7230 Features
·Radiation Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight
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