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IRHF8230, IRHF9130, IRHF9230

Table of contents:
Info of IRHF8230
Info of IRHF9130
Info of IRHF9230

IRHF8230, IRHF9130, IRHF9230 Selling Leads, Datasheet

MFG:IR Package Cooled:TO-205AF D/C:00+

IRHF8230, IRHF9130, IRHF9230 Datasheet download

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Part Number: IRHF8230

MFG: IR

Package Cooled: TO-205AF

D/C: 00+

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IRHF8230 General Description

International Rectifier's RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiaition doses as high as 1x106 Rads(Si). Under identical pre- and post-irradiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.

IRHF8230 Maximum Ratings

	Parameter	IRHF7230, IRHF8230	Units
I_D @ V_GS= 12V, T_C= 25V	Continuous Drain Current	5.5	A
I_D @ V_GS = 12V, T_C = 100	Continuous Drain Current	3.5
I_DM	Pulsed Drain Current	22
P_D @ T_C= 25	Max. Power Dissipation	25	W
	Linear Derating Factor	0.2	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	240	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 (0.063 in. (1.6mm) from case for 10s
	Weight	0.98 (Typical)	g

IRHF8230 Features

·Radiation Hardened up to 1 x 10⁶ Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight

IRHF9230 General Description

International Rectifier's RAD-Hard HEXFET^TM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R _ds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

IRHF9230 Maximum Ratings

	Parameter		Units
I_D @ V_GS= 12V, T_C = 25°C	Continuous Drain Current	-4.0	A
I_D @ V_GS = 12V, T_C = 100°C	Continuous Drain Current	-2.4
I_DM	Pulsed Drain Current	-16
P_D @ T_C = 25°C	Max. Power Dissipation	25	W
	Linear Derating Factor	2.0	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	171	mJ
I_AR	Avalanche Current	-4.0	A
E_AR	Repetitive Avalanche Energy	2.5	mJ
dv/dt	Peak Diode Recovery dv/dt	-27	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to +150
	Storage Temperature Range	300 (0.063 in.(1.6 mm from case for 10s))
	Weight	0.98 ( Typical)	g

* For footnotes refer to the last page

IRHF9230 Features

· Single Event Effect (SEE) Hardened
· Low R_DS(on)· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight

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