IRHM57160, IRHM7064, IRHM7230 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-254AA D/C:05+
IRHM57160, IRHM7064, IRHM7230 Datasheet download
Part Number: IRHM57160
MFG: IR
Package Cooled: TO-254AA
D/C: 05+
IRHM57160, IRHM7064, IRHM7230
- Table of contents:
Info of IRHM57160
Info of IRHM7064
Info of IRHM7230
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About IRHM57160
PDF/DataSheet Download
Datasheet: IRHM57160
File Size: 124370 KB
Manufacturer: IRF [International Rectifier]
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About IRHM7064
PDF/DataSheet Download
Datasheet: IRHM7064
File Size: 124327 KB
Manufacturer: IRF [International Rectifier]
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About IRHM7230
PDF/DataSheet Download
Datasheet: IRHM7230
File Size: 472497 KB
Manufacturer:
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IRHM57160 General Description
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM57160 Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 35* | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 35* | |
| IDM | Pulsed Drain Current | 140 | |
| PD @ TC = 25 | Max. Power Dissipation | 250 | W |
| Linear Derating Factor | 2.0 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 35 | A |
| EAR | Repetitive Avalanche Energy | 25 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 3.4 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 9.3 (Typical) | g |
IRHM57160 Features
·Single Event Effect (SEE) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermatically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermatically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
IRHM7064 General Description
International Rectifier's RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/ Sec, and return to normal operation within a few microseconds.
Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the wellestablished advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
IRHM7064 Maximum Ratings
| Parameter | IRHM7064, IRHM8064 | Units | |
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 35* | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 35* | |
| IDM | Pulsed Drain Current | 295 | |
| PD @ TC = 25 | Max. Power Dissipation | 250 | W |
| Linear Derating Factor | 2.0 | W/K | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 35 | A |
| EAR | Repetitive Avalanche Energy | 25 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10s | ||
| Weight | 9.3 (Typical) | g | |
IRHM7064 Features
·Radiation Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electrically Isolated
·Ceramic Eyelets
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electrically Isolated
·Ceramic Eyelets
IRHM7230 General Description
The IRHM7230 has 9 features.The first one is single event effect (SEE) hardened.The second one is low RDS(on).The third one is low total gate change.The fourth one is proton tolerant.The fifth one is simple drive requirments.The sixth one is ease of paralleling.The seventh one is hermetically sealed.The eighth one is ceramic package.The ninth one is light weight.
International rectifier's RADHard HEXFET technology provides high performance power MOSFETs for space applications.This technology has over a decade of proven performance and reliability in satellite applications.These devices have been characterized for both total dose and single event effects (SEE).The combination of low rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.These devices retain all of the well established advantages of MOSFETs such as voltage control,fast switching,ease of paralleling and temperature stability of electrical parameters.Package containing beryllia shall not be ground,sandblasted,machined,or have other operations performed on them which will produce beryllia or beryllium dust.Futhermore,beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
At present there is not too much information about this model.If you are willing to find more about IRHM7230, please pay attention to our web! We will promptly update the relevant information.
IRHM7230 Maximum Ratings
IRHM7230 Features
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