IRHM7150, IRHM7160, IRHM7250 Selling Leads, Datasheet
MFG:IR Package Cooled:TO-254AA D/C:05+
IRHM7150, IRHM7160, IRHM7250 Datasheet download
Part Number: IRHM7150
MFG: IR
Package Cooled: TO-254AA
D/C: 05+
IRHM7150, IRHM7160, IRHM7250
- Table of contents:
Info of IRHM7150
Info of IRHM7160
Info of IRHM7250
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About IRHM7150
PDF/DataSheet Download
Datasheet: IRHM7150
File Size: 454804 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHM7160
PDF/DataSheet Download
Datasheet: IRHM7160
File Size: 272678 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
About IRHM7250
PDF/DataSheet Download
Datasheet: IRHM7250
File Size: 277528 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHM7250 General Description
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHM7250 Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 26 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 16 | |
| IDM | Pulsed Drain Current | 104 | |
| PD @ TC = 25 | Max. Power Dissipation | 150 | W |
| Linear Derating Factor | 1.2 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 500 | mJ |
| IAR | Avalanche Current | 26 | A |
| EAR | Repetitive Avalanche Energy | 15 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
| Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
| Weight | 9.3 (Typical) | g |
IRHM7250 Features
·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Eyelets
·Light Weight
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Eyelets
·Light Weight
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