IRHN8054, IRHN8250, IRHN8450 Selling Leads, Datasheet
MFG:IR Package Cooled:SMD-1 D/C:05+
IRHN8054, IRHN8250, IRHN8450 Datasheet download
Part Number: IRHN8054
MFG: IR
Package Cooled: SMD-1
D/C: 05+
MFG:IR Package Cooled:SMD-1 D/C:05+
IRHN8054, IRHN8250, IRHN8450 Datasheet download
MFG: IR
Package Cooled: SMD-1
D/C: 05+
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PDF/DataSheet Download
Datasheet: IRH3054
File Size: 245943 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRHN8250
File Size: 601109 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: IRHN8450
File Size: 317696 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
International Rectifier's MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Parameter | IRHN7250, IRHN8250 | Units | |
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 26 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 16 | |
IDM | Pulsed Drain Current | 104 | |
PD @ TC = 25 | Max. Power Dissipation | 150 | W |
Linear Derating Factor | 1.2 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 26 | A |
EAR | Repetitive Avalanche Energy | 16 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
Weight | 2.6 (Typical) | g |
Parameter | Units | ||
ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 11 | A |
ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 7.0 | A |
IDM | Pulsed Drain Current | 44 | A |
PD @ TC = 25°C | Max. Power Dissipation | 150 | W |
Linear Derating Factor | 1.2 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 11 | A |
EAR | Repetitive Avalanche Energy | 15 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
TJ | Operating Junction | -55 to 150 | oC |
TSTG | Storage Temperature Range | oC | |
Pckg. Mounting Surface Temp. | 300 (for 5s) | oC | |
Weight | 2.6 (Typical) | g |