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IRHNA7064, IRHNB7160, IRHNB7460SE

Table of contents:
Info of IRHNA7064
Info of IRHNB7160
Info of IRHNB7460SE

IRHNA7064, IRHNB7160, IRHNB7460SE Selling Leads, Datasheet

MFG:IR Package Cooled:N/A D/C:2010+

IRHNA7064, IRHNB7160, IRHNB7460SE Picture

IRHNA7064, IRHNB7160, IRHNB7460SE Datasheet download

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Part Number: IRHNA7064

MFG: IR

Package Cooled: N/A

D/C: 2010+

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IRHNA7064 General Description

International Rectifier's RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.

IRHNA7064 Maximum Ratings

	Parameter	IRHNA7064, IRHNA8064	Units
I_D @ V_GS= 12V, T_C= 25V	Continuous Drain Current	75*	A
I_D @ V_GS = 12V, T_C = 100	Continuous Drain Current	56
I_DM	Pulsed Drain Current	356
P_D @ T_C= 25	Max. Power Dissipation	300	W
	Linear Derating Factor	2.0	W/K
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	500	mJ
I_AR	Avalanche Current	75*	A
E_AR	Repetitive Avalanche Energy	30	mJ
dv/dt	Peak Diode Recovery dv/dt	4.5	V/ns
T_J	Operating Junction	-55 to 150
T_STG	Storage Temperature Range	-55 to 150
	Package Mounting Surface Temperature	300 (for 5 sec.)
	Weight	3.3 (Typical)	g

IRHNA7064 Features

·Radiation Hardened up to 1 x 10⁶Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight

IRHNB7160 General Description

International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical

IRHNB7160 Maximum Ratings

	Parameter		Units
I_D @ V_GS = 12V, T_C = 25	Continuous Drain Current	51	A
I_D @ V_GS = 12V, T_C = 100	Continuous Drain Current	32.5
I_DM	Pulsed Drain Current	204
P_D @ T_C= 25	Max. Power Dissipation	300	W
	Linear Derating Factor	2.4	W/
V_GS	Gate-to-Source Voltage	±20	V
E_AS	Single Pulse Avalanche Energy	500	mJ
I_AR	Avalanche Current	51	A
E_AR	Repetitive Avalanche Energy	30	mJ
dv/dt	Peak Diode Recovery dv/dt	7.3	V/ns
T_J T_STG	Operating Junction Storage Temperature Range	-55 to 150
	Lead Temperature	300 (0.063 in./1.6mm from case for 10s)
	Weight	3.5 (Typical)	g

IRHNB7160 Features

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Surface Mount
Light Weight

IRHNB7460SE General Description

      The IRHNB7460SE is a kind of International Rectifier's RADHardTM HEXFET@ MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the wellestablished advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
      The features of IRHNB7460SE are Single Event Effect (SEE) Hardened, Ultra Low RDS(on), Low Total Gate Charge, Proton Tolerant, Simple Drive Requirements, Ease of Paralleling, Hermetically Sealed, Surface Mount, Light Weight
      The parameters of the IRF744PbF are VGS (Gate-to-Source Voltage)=±20V, ID @ TC= 25°C   (Continuous Drain Current, VGS @ 12V)=20A, ID @ TC =100°C (Continuous Drain Current, VGS @ 12V )=12A, IDM (Pulsed Drain Current)=80A, PD (@Tc = 25°C Power Dissipation)=300W, EAS (Single Pulse Avalanche Energy)=500mJ, IAR( Avalanche Current)= 20A, EAR (Repetitive Avalanche Energy)=30mJ, dv/dt( Peak Diode Recovery dv/dt) =3.8V/ns, TJ (Operating Junction and)= -55 to + 150°C=TSTG, RJC( Junction-to-Case )=0.42°C/W, RthJ-PCB( Junction-to-PC board )=1.6°C/W(soldered to 2 inch square clad PC board).

IRHNB7460SE Maximum Ratings

IRHNB7460SE Features

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