IRHNA7Z60, IRHNA8064, IRHNA8160 Selling Leads, Datasheet
MFG:IR Package Cooled:SMD-2 D/C:05+
IRHNA7Z60, IRHNA8064, IRHNA8160 Datasheet download
Part Number: IRHNA7Z60
MFG: IR
Package Cooled: SMD-2
D/C: 05+
MFG:IR Package Cooled:SMD-2 D/C:05+
IRHNA7Z60, IRHNA8064, IRHNA8160 Datasheet download
MFG: IR
Package Cooled: SMD-2
D/C: 05+
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Datasheet: IRHNA7Z60
File Size: 126996 KB
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PDF/DataSheet Download
Datasheet: IRHNA8064
File Size: 133962 KB
Manufacturer: IRF [International Rectifier]
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PDF/DataSheet Download
Datasheet: IRHNA8160
File Size: 165185 KB
Manufacturer: IRF [International Rectifier]
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Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 75* | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 75* | A |
IDM | Pulsed Drain Current ➀ | 300 | A |
PD @ TC = 25°C | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.4 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 500 | mJ |
IAR | Avalanche Current ➀ | 75 | A |
EAR | Repetitive Avalanche Energy ➀ | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 0.35 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (for 5s) | ||
Weight | 3.3 (Typical ) | g |
International Rectifier's RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Parameter | IRHNA7064, IRHNA8064 | Units | |
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 75* | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 56 | |
IDM | Pulsed Drain Current | 356 | |
PD @ TC = 25 | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.0 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 75* | A |
EAR | Repetitive Avalanche Energy | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 4.5 | V/ns |
TJ | Operating Junction | -55 to 150 | |
TSTG | Storage Temperature Range | -55 to 150 | |
Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
Weight | 3.3 (Typical) | g | |
International Rectifier's RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
Parameter | IRHNA7160, IRHNA8160 | Units | |
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 51 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 32.5 | |
IDM | Pulsed Drain Current | 204 | |
PD @ TC = 25 | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.0 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 51 | A |
EAR | Repetitive Avalanche Energy | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.5 | V/ns |
TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
Weight | 3.3 (Typical) | g |