IRHY597230CM, IRHY7130CM, IRHY7230CM Selling Leads, Datasheet
MFG:IR Package Cooled:TO-257AA D/C:05+
IRHY597230CM, IRHY7130CM, IRHY7230CM Datasheet download
Part Number: IRHY597230CM
MFG: IR
Package Cooled: TO-257AA
D/C: 05+
IRHY597230CM, IRHY7130CM, IRHY7230CM
- Table of contents:
Info of IRHY597230CM
Info of IRHY7130CM
Info of IRHY7230CM
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About IRHY597230CM
PDF/DataSheet Download
Datasheet: IRHY597230CM
File Size: 109873 KB
Manufacturer:
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About IRHY7130CM
PDF/DataSheet Download
Datasheet: IRHY7130CM
File Size: 110250 KB
Manufacturer:
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About IRHY7230CM
PDF/DataSheet Download
Datasheet: IRHY7230CM
File Size: 107555 KB
Manufacturer: IRF [International Rectifier]
Download : Click here to Download
IRHY597230CM Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | -8.0 | A |
| ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | -5.0 | A |
| IDM | Pulsed Drain Current | -32 | A |
| PD @ TC = 25°C | Max. Power Dissipation | 75 | W |
| Linear Derating Factor | 0.6 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 80 | mJ |
| IAR | Avalanche Current | -8.0 | A |
| EAR | Repetitive Avalanche Energy | 7.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -12 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | oC |
| Lead Temperature | 300 ( 0.063 in. (1.6mm) from case for 10s) | oC | |
| Weight | 4.3 (typical) | g |
IRHY597230CM Features
· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight
IRHY7130CM Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 14.4 | A |
| ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 9.1 | A |
| IDM | Pulsed Drain Current | 58 | A |
| PD @ TC = 25°C | Max. Power Dissipation | 75 | W |
| Linear Derating Factor | 0.6 | W/°C | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 150 | mJ |
| IAR | Avalanche Current | A | |
| EAR | Repetitive Avalanche Energy | mJ | |
| dv/dt | Peak Diode Recovery dv/dt | 6.0 | V/ns |
| TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | oC |
| Lead Temperature | 300 ( 0.063 in. (1.6mm) from case for 10s) | oC | |
| Weight | 7.0 (typical) | g |
IRHY7130CM Features
· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Light Weight
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Light Weight
IRHY7230CM General Description
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
IRHY7230CM Maximum Ratings
| Parameter | Units | ||
| ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 9.4 | A |
| ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 6.0 | |
| IDM | Pulsed Drain Current | 37 | |
| PD @ TC = 25 | Max. Power Dissipation | 75 | W |
| Linear Derating Factor | 0.6 | W/ | |
| VGS | Gate-to-Source Voltage | ±20 | V |
| EAS | Single Pulse Avalanche Energy | 150 | mJ |
| IAR | Avalanche Current | 5.5 | A |
| EAR | Repetitive Avalanche Energy | 7.5 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 16 | V/ns |
| TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
| Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10 sec.) | ||
| Weight | 7.0 (Typical) | g |
IRHY7230CM Features
· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Light Weight
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Light Weight
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