K4N26323AF-GC1K, K4N2632AE-GC1K, K4N27 Selling Leads, Datasheet
MFG:8 Package Cooled:SAMSUNG D/C:BGA
K4N26323AF-GC1K, K4N2632AE-GC1K, K4N27 Datasheet download
Part Number: K4N26323AF-GC1K
MFG: 8
Package Cooled: SAMSUNG
D/C: BGA
MFG:8 Package Cooled:SAMSUNG D/C:BGA
K4N26323AF-GC1K, K4N2632AE-GC1K, K4N27 Datasheet download
MFG: 8
Package Cooled: SAMSUNG
D/C: BGA
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PDF/DataSheet Download
Datasheet: K4N25
File Size: 262490 KB
Manufacturer: KODENSHI [KODENSHI KOREA CORP.]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K4N25
File Size: 262490 KB
Manufacturer: KODENSHI [KODENSHI KOREA CORP.]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: K4N27
File Size: 208654 KB
Manufacturer: KODENSHI [KODENSHI KOREA CORP.]
Download : Click here to Download
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor in a 6-pin package.
Parameter | Symbol | Rating | Unit | |
Input | Forward Current | IF | 80 | mA |
Reverse Voltage | VR | 5 | V | |
Peak Forward Current *1 | IFP | 3 | A | |
Power Dissipation | PD | 70 | mW | |
Output | Collector-Emitter Breakdown Voltage | BVCEO | 35 *4 | V |
Emitter-Collector Breakdown Voltage | BVCEO | 6 | V | |
Collector-Base Breakdown Voltage | BVCEO | 70 | V | |
Collector Current | IC | 100 | mA | |
Collector Power Dissipation | PC | 70 | mW | |
Input to Output Isolation Voltage*2 | Viso | AC1500 | Vrms | |
Storage Temperature | Tstg | -55~+125 | ||
Operating Temperature | Topr | -30~+100 | ||
Lead Soldering Temperature*3 | Tsol | 260 | ||
Total Power Dissipation | Ptot | 200 | mW |
*1. Input current with 100㎲ pulse width, 1% duty cycle
*2. Measured at RH=40~60% for 1min
*3. 1/16 inch form case for 10sec
*4. Customer Option