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KH8334L, KHB7D5N60P1, KHC101E104M31N0T00

KH8334L, KHB7D5N60P1, KHC101E104M31N0T00 Selling Leads, Datasheet

MFG:NIPPON  Package Cooled:09+  D/C:2000

KH8334L, KHB7D5N60P1, KHC101E104M31N0T00 Picture

KH8334L, KHB7D5N60P1, KHC101E104M31N0T00 Datasheet download

Five Points

Part Number: KH8334L

 

MFG: NIPPON

Package Cooled: 09+

D/C: 2000

 

 

 
 
 
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  • KH8334

  • Vendor: ON Pack: SOP D/C: 04+& Qty: 496 Note: IC  Adddate: 2024-03-28
  • Inquire Now
  • Guangsheng Electronics Co.,Ltd   China
    Contact: Ms.MonicaXu   MSN:xujing_cheesecake@hotmail.com
    Tel: 086-0755-83003554
    Fax: 086-0755-83778418
    (201)

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KHB7D5N60P1 Suppliers

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  • KHB334

  • Vendor: ON Pack: SOP D/C: 04+& Qty: 1019 Note: IC  Adddate: 2024-03-28
  • Inquire Now
  • Guangsheng Electronics Co.,Ltd   China
    Contact: Ms.MonicaXu   MSN:xujing_cheesecake@hotmail.com
    Tel: 086-0755-83003554
    Fax: 086-0755-83778418
    (201)

About KHB7D5N60P1

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Datasheet: KHB7D5N60P1

File Size: 65536 KB

Manufacturer: KEC

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KHB7D5N60P1 General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.

KHB7D5N60P1 Maximum Ratings

CHARACTERISTIC
SYMBOL
RATING
UNIT
KHB7D5N60P1
KHB7D5N60F1
KHB7D5N60F2
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Drain Current @TC=25
ID
7.5
7.5*
A
@TC=100
4.6
4.6*
Pulse (Note 1)
IDP
30
30*
Single pulse Avalanche Energy (Note 2)
EAS
230
mJ
Repetitive Avalanche Energy (Note 1)
EAR
14.7
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Drain Power Dissipation TC=25
PD
147
48
W
Derate above 25
1.18
0.38
W/
Maximum Junction Temperature
Tj
150
Storage temperature range
TSTG
-55~150
Thermal Characteristics
Thermal Resistance, Junction-to-Case
RthJC
0.85
2.6
/W
Thermal Resistance, Case-to-Sink
RthCS
0.5
-
/W
Thermal Resistance, Junction-to- Ambient
RthJA
62.5
62.5
/W
* : Drain current limited by maximum junction temperature.

KHB7D5N60P1 Features

·VDSS=600V, ID=7.5A
·Drain-Source ON Resistance : RDS(ON)=1.2 @VGS=10V
·Qg(typ.)= 32.5nC

KHB7D5N60P1 Connection Diagram

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