LD1003S, LD1010D, LD1010DA Selling Leads, Datasheet
MFG:501 Package Cooled:00+ D/C:TO220
LD1003S, LD1010D, LD1010DA Datasheet download
Part Number: LD1003S
MFG: 501
Package Cooled: 00+
D/C: TO220
LD1003S, LD1010D, LD1010DA
- Table of contents:
Info of LD1003S
Info of LD1010D
Info of LD1010DA
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About LD1003S
PDF/DataSheet Download
Datasheet: LD1003S
File Size: 710068 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About LD1010D
PDF/DataSheet Download
Datasheet: LD1010D
File Size: 678528 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About LD1003S
PDF/DataSheet Download
Datasheet: LD1003S
File Size: 710068 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
LD1003S General Description
The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution.
LD1003S Maximum Ratings
| Parameter |
Symbol |
Ratings |
Units |
| Drain-Source Voltage |
VDS |
24 |
V |
| Gate-Source Voltage |
VGS |
-10 |
V |
| Gate-Drain Voltage |
VGD |
-28 |
V |
| Continuous Drain Current |
ID |
50 |
A |
| Pulsed Drain Current |
ID |
100 |
A |
| Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 ) |
EAS |
220 |
mJ |
| Junction Temperature |
TJ |
-55 to 150°C |
°C |
| Storage Temperature |
TSTG |
-65 to 150°C |
°C |
| Lead Soldering Temperature, 10 seconds |
T |
260°C |
°C |
| Power Dissipation (Derated at 25°C) |
PD |
80 |
W |
LD1003S Features
Trench Power JFET with low threshold voltage Vth.
Device fully "ON" with Vgs = 0.7V
Optimum for "Low Side" Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No "Body Diode"; extremely low Cds
Added Fast Recovery Schottky Diode in same package
Device fully "ON" with Vgs = 0.7V
Optimum for "Low Side" Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No "Body Diode"; extremely low Cds
Added Fast Recovery Schottky Diode in same package
LD1003S Typical Application
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
LD1010D General Description
The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn-on/turn-off, which minimizes the required dead time. The transistor "No Body Diode" provides a very low associated parasitic capacitance Cds. A Schottky Diode is added for applications where a freewheeling diode is required. Ringing is also reduced so that a lower voltage device may be a better solution.
LD1010D Maximum Ratings
| Parameter |
Symbol |
Ratings |
Units |
| Drain-Source Voltage |
VDS |
24 |
V |
| Gate-Source Voltage |
VGS |
-10 |
V |
| Gate-Drain Voltage |
VGD |
-28 |
V |
| Continuous Drain Current |
ID |
50 |
A |
| Pulsed Drain Current |
ID |
100 |
A |
| Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 5VDC, IL=60APK, L=0.3mH, RG=100 ) |
EAS |
220 |
mJ |
| Junction Temperature |
TJ |
-55 to 150°C |
°C |
| Storage Temperature |
TSTG |
-65 to 150°C |
°C |
| Lead Soldering Temperature, 10 seconds |
T |
260°C |
°C |
| Power Dissipation (Derated at 25°C) |
PD |
80 |
W |
LD1010D Features
Trench Power JFET with low threshold voltage Vth.
Device fully "ON" with Vgs = 0.7V
Optimum for "Low Side" Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No "Body Diode"; extremely low Cds
Added Fast Recovery Schottky Diode in same package
Device fully "ON" with Vgs = 0.7V
Optimum for "Low Side" Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No "Body Diode"; extremely low Cds
Added Fast Recovery Schottky Diode in same package
LD1010D Typical Application
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
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