MFG:IR Package Cooled:TO-252 D/C:05+
MFG: IR
Package Cooled: TO-252
D/C: 05+
Description: The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved e...
The Power JFET transistor from Lovoltech is a device that presents a Low Rdson allowing for improved efficiencies in DC-DC switching applications. The device is designed with a low threshold such that drivers can operate at 5V, which reduces the driver power dissipation and increases the overall efficiency. Lower threshold produces faster turn on/turn-off, which minimizes the required dead time. A PN Diode is added for applications where a freewheeling diode is required.
This product has tin plated leads.
| Parameter |
Symbol |
Ratings |
Units |
| Drain-Source Voltage |
VDS |
24 |
V |
| Gate-Source Voltage |
VGS |
-12 |
V |
| Gate-Drain Voltage |
VGD |
-28 |
V |
| Continuous Drain Current |
ID |
501 |
A |
| Pulsed Drain Current |
ID |
100 |
A |
| Single Pulse Drain-to-Source Avalanche Energy at 25°C (VDD= 6VDC, IL=60APK, L=0.3mH, RG=100 ) |
EAS |
200 |
mJ |
| Junction Temperature |
TJ |
-55 to 150°C |
°C |
| Storage Temperature |
TSTG |
-65 to 150°C |
°C |
| Lead Soldering Temperature, 10 seconds |
T |
260°C |
°C |
| Power Dissipation (Derated at 25°C) |
PD |
69 |
W |
LD1014D
PDF/DataSheet Download
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