MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:252 D/C:08+
MJD243, MJD243-1, MJD243G Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: 252
D/C: 08+
Description: TRANS POWER NPN 4A 100V DPAK
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PDF/DataSheet Download
Datasheet: MJD243
File Size: 127954 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MJD243-1
File Size: 214793 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MJD112
File Size: 52676 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | MJD243 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 4A |
| Power - Max | 12.5W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Frequency - Transition | 40MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MJD243 MJD243 |
|
Rating |
Symbol |
Value |
Unit |
| CollectorBase Voltage |
VCEO |
100 |
Vdc |
| CollectorEmitter Voltage |
VCBO |
100 |
Vdc |
| EmitterBase Voltage |
VEBO |
7.0 |
Vdc |
| Collector Current - Continuous -Pake |
IC |
4.0 8.0 |
Adc |
| Base Current |
IB |
1.0 |
Adc |
| Total Device Dissipation @ TC = 25 Derate Above 25 |
PD |
12.5 0.1 |
W W/ |
| Total Device Dissipation @ TC = 25 (Note 1) Derate Above 25 |
PD |
1.4 0.011 |
W W/ |
| Operating and Storage Junction Temperature Range |
TJ, Tstg |
65 to +200 |
• Collector−Emitter Sustaining Voltage − VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain − hFE = 40 (Min) @ IC = 200 mAdc
= 15 (Min) @ IC = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves ("−1" Suffix)
• Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
• Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.6 Vdc (Max) @ IC = 1.0 Adc
• High Current−Gain − Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage − ICBO = 100 nAdc @ Rated VCB
• Epoxy Meets UL 94, V−0 @ 0.125 in.
• ESD Ratings: Human Body Model, 3B 8000 V Machine Model, C 400 V
• Pb−Free Package is Available
| Technical/Catalog Information | MJD243G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 4A |
| Power - Max | 12.5W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 200mA, 1V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Frequency - Transition | 40MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MJD243G MJD243G MJD243GOS ND MJD243GOSND MJD243GOS |
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