Purchase MJD112, In-stock MJD112 From SeekIC.
MFG:FAIRC Package Cooled:TO-252(DPAK) D/C:09+
- Table of contents:
MJD112
-
Suppliers
DataSheet
General Description
MJD112 Maximum Ratings
|
Symbol |
Parameter |
Value |
Unit |
|
VCBO |
Collector-Base Voltage (IE = 0) |
100 |
V |
|
VCEO |
Collector-Emitter Voltage (IB = 0) |
100 |
V |
|
VEBO |
Emitter-Base Voltage (IC = 0) |
5 |
V |
|
IC |
Collector Current |
2 |
A |
|
Icp |
Collector Peak Current |
4 |
A |
|
IB |
Base Current |
50 |
mA |
|
PC |
Collector Dissipation (TC=25) |
20 |
W |
| Collector Dissipation (Ta=25) |
1.75 |
W | |
|
TJ |
Storage Temperature |
150 |
|
|
Tstg |
Max. Operating Junction Temperature |
-65 to150 |
MJD112 Typical Application
• High DC Current Gain
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, " - I " Suffix)
• Electrically Similar to Popular TIP112
• Built-in a Damper Diode at E-C
• Lead Formed for Surface Mount Applications (No Suffix)
• Straight Lead (I-PAK, " - I " Suffix)
• Electrically Similar to Popular TIP112
MJD112
PDF/DataSheet Download
- Datasheet: MJD112
- File Size: 52676 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
- ·MJD112/L
- KEC
- EPITAXIAL PLANAR NPN TRANSISTOR
- 32768 KB
- ·MJD112-001
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD1121
- MOTOROLA [Motorola, Inc]
- SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
- 313845 KB
- ·MJD112L
- KEC [KEC(Korea Electronics)]
- EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
- 404075 KB
- ·MJD112RL
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD112T4
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 313845 KB
- ·MJD112T4G
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD117
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 404229 KB
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