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MFG:ON Semiconductor Category:Discrete Semiconductor Products

Five Points

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Descriptions: TRANS DARL NPN 2A 100V STR DPAK

Price Break

1
10
100
250
500
1000
2500
5000

Unit Price

.59000
.54500
.45280
.38576
.33544
.25997
.23481
.22307

Extended Price

0.59
5.45
45.28
96.44
167.72
259.97
587.02
1115.35

(All prices are in USD) Prices for reference only

TRANS DARL NPN 2A 100V STR DPAK

Technical/Catalog Information	MJD112-1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	2A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 8mA, 2A
Frequency - Transition	25MHz
Current - Collector Cutoff (Max)	20A
Mounting Type	Through Hole
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD112 1G MJD1121G MJD112 1GOS ND MJD1121GOSND MJD112-1GOS

MJD112
PDF/DataSheet Download

·MJD112/L
KEC
EPITAXIAL PLANAR NPN TRANSISTOR
32768 KB
·MJD112-001
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD1121
MOTOROLA [Motorola, Inc]
SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
313845 KB
·MJD112L
KEC [KEC(Korea Electronics)]
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
404075 KB
·MJD112RL
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD112T4
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
313845 KB
·MJD112T4G
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
151292 KB
·MJD117
ONSEMI [ON Semiconductor]
Complementary Darlington Power Transistors
404229 KB

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