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MJD112/L

Features: ·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.·Low Collector-Emitter Saturation Voltage.·Straight Lead (IPAK, L Suffix)·Complementary to MJD117/L.Specifications CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter...

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MJD112/L: Features: ·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.·Low Collector-Emitter Saturation Voltage.·Straight Lead (IPAK, L Suffix)·Complementary to MJD117/L.Specifications CHARACTER...

MJD112/L Data Sheet

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Part Number:
MJD112/L
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.
·Low Collector-Emitter Saturation Voltage.
·Straight Lead (IPAK, "L" Suffix)
·Complementary to MJD117/L.


Specifications

CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
VCEO
100
V
Emitter-Base Voltage
VEBO
5
V
Collector Current DC
IC
2
A
Pulse
4
Base Current DC
IB
50
mA
Collector Power
Dissipation		 Ta=25
PC
1.0
W
Tc=25
20
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150



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