Purchase MJD112/L, In-stock MJD112/L From SeekIC.
- Table of contents:
MJD112/L
-
Suppliers
DataSheet
General Description
MJD112/L Maximum Ratings
|
CHARACTERISTIC |
SYMBOL |
RATING |
UNIT | |
| Collector-Base Voltage |
VCBO |
100 |
V | |
| Collector-Emitter Voltage |
VCEO |
100 |
V | |
| Emitter-Base Voltage |
VEBO |
5 |
V | |
| Collector Current | DC |
IC |
2 |
A |
| Pulse |
4 | |||
| Base Current | DC |
IB |
50 |
mA |
| Collector Power Dissipation |
Ta=25 |
PC |
1.0 |
W |
| Tc=25 |
20 | |||
| Junction Temperature |
Tj |
150 |
||
| Storage Temperature Range |
Tstg |
-55 150 |
||
MJD112/L Features
·High DC Current Gain. : hFE=1000(Min.), VCE=4V, IC=1A.
·Low Collector-Emitter Saturation Voltage.
·Straight Lead (IPAK, "L" Suffix)
·Complementary to MJD117/L.
·Low Collector-Emitter Saturation Voltage.
·Straight Lead (IPAK, "L" Suffix)
·Complementary to MJD117/L.
MJD112/L
PDF/DataSheet Download
- Datasheet: MJD112/L
- File Size: 32768 KB
- Manufacturer: KEC
- Click here to Download
- ·MJD112
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 52676 KB
- ·MJD112-001
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD1121
- MOTOROLA [Motorola, Inc]
- SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
- 313845 KB
- ·MJD112L
- KEC [KEC(Korea Electronics)]
- EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
- 404075 KB
- ·MJD112RL
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD112T4
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 313845 KB
- ·MJD112T4G
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 151292 KB
- ·MJD117
- ONSEMI [ON Semiconductor]
- Complementary Darlington Power Transistors
- 404229 KB
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