MJD127T4

Power Dissipation :
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Configuration : Single
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Collector- Base Voltage VCBO : 100 V
Maximum Operating Temperature : + 150 C
Maximum DC Collector Current : 5 A
Maximum Collector Cut-off Current : 10 uA
Package / Case : TO-252


Features:

`STMicroelectronics PREFERRED SALESTYPES
`LOW BASE-DRIVE REQUIREMENTS
`INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
`THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX "-1")
`SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
`ELECTRICALLY SIMILAR TO TIP122 AND TIP127


Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER


Specifications

Symbol	Conditions		Value	Unit
		PNP	MJD122
		NPN	MJD127
VCBO	Collector-Base Voltage (IE = 0)		100	V
VCEO	Collector-Emitter Voltage (IB = 0)		100	V
VEBO	Emitter-Base Voltage (IC = 0)		5	V
IC	Collector Current		5	A
ICM	Collector Peak Current (tp < 5 ms)		8	A
IB	Base Current		0.1	A
Ptot	Total Dissipation at Tc = 25		20	W
Tstg	Storage Temperature		-65 to 200
TJ	Max. Operating Junction Temperature		150

Description

The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance.


Parameters:

Technical/Catalog Information	MJD127T4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	8A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 4A, 4V
Vce Saturation (Max) @ Ib, Ic	2V @ 16mA, 4A
Frequency - Transition	-
Current - Collector Cutoff (Max)	10A
Mounting Type	Surface Mount
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	MJD127T4 MJD127T4 497 2471 2 ND 49724712ND 497-2471-2