MZ056, MZ0912B100Y, MZ0912B50Y Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOP D/C:2007+
MZ056, MZ0912B100Y, MZ0912B50Y Datasheet download
Part Number: MZ056
MFG: PHILIPS
Package Cooled: SOP
D/C: 2007+
MZ056, MZ0912B100Y, MZ0912B50Y
- Table of contents:
Info of MZ056
Info of MZ0912B100Y
Info of MZ0912B50Y
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About MZ0912B100Y
PDF/DataSheet Download
Datasheet: MZ0912B100Y
File Size: 101258 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About MZ0912B100Y
PDF/DataSheet Download
Datasheet: MZ0912B100Y
File Size: 101258 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About MZ0912B50Y
PDF/DataSheet Download
Datasheet: MZ0912B50Y
File Size: 92910 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
MZ0912B100Y General Description
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs.
The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.
MZ0912B100Y Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 65 | V |
| VCES | collector-emitter voltage | RBE = 0 | - | 60 | V |
| VCEO | collector-emitter voltage | open base | - | 20 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| IC | collector current(DC) | tp 10 ms; 10% | - | 6 | A |
| Ptot | total power dissipation (peak power) |
tp 10 ms; 10%;Tmb = 75 | - | 290 | W |
| Tstg | storage temperature | -65 | +200 | ||
| Tj | operating junction temperature | - | 200 | ||
| Tsld | soldering temperature | up to 0.2 mm from ceramic; t 10 s |
- | 235 |
MZ0912B100Y Features
· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry improves power sharing and low thermal resistance
· Input and output matching cell allows an easier design of circuits.
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry improves power sharing and low thermal resistance
· Input and output matching cell allows an easier design of circuits.
MZ0912B100Y Typical Application
· Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.
MZ0912B50Y General Description
NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. It is mounted in common base
configuration, and specified in
class C.
MZ0912B50Y Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collectorbase voltage | openemitter | - | 65 | v |
| VCEO | collector-emitter voltage | open base | - | 20 | v |
| VCES | collector-emitter voltage | RBE = 0 | - | 60 | v |
| VEBO | emitter-base voltage | open collector | - | 3 | v |
| IC | collector current (DC) | tp 10 s; 10% | - | 3 | A |
| Ptot | total power dissipation (peak power) | Tmb = 75 ; tp 10 s; 10% | - | 150 | w |
| Tstg | storage temperature | -65 | +200 | ||
| Tj | operating junction temperature | - | 200 | ||
| Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
MZ0912B50Y Features
· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input and output matching cell allows an easier design of circuits.
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input and output matching cell allows an easier design of circuits.
MZ0912B50Y Typical Application
Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application.
MZ0912B50Y Connection Diagram
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