Position: Home  > All Categories> Integrated Circuits (ICs) > MZ0912B50Y

MZ0912B50Y

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry gives good balance of di...

product image

MZ0912B50Y Picture
See larger image
SeekIC No. : 004432209 Detail

MZ0912B50Y: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization real...

MZ0912B50Y Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
MZ0912B50Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry gives good balance of dissipated power and low thermal resistance
· Input and output matching cell allows an easier design of circuits.


Application

Common base, class C, broadband, pulse power amplifier from 960 to 1215 MHz for TACAN application.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collectorbase voltage openemitter - 65 v
VCEO collector-emitter voltage open base - 20 v
VCES collector-emitter voltage RBE = 0 - 60 v
VEBO emitter-base voltage open collector - 3 v
IC collector current (DC) tp 10 s; 10% - 3 A
Ptot total power dissipation (peak power) Tmb = 75 ; tp 10 s; 10% - 150 w
Tstg storage temperature -65 +200
Tj operating junction temperature - 200
Tsld soldering temperature t 10 s; note 1 - 235



Description

NPN silicon planar epitaxial
microwave power transistor in a
SOT443A metal ceramic flange
package with base connected to
flange. MZ0912B50Y is mounted in common base
configuration, and specified in
class C.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Kits
IT243
UVSC-110-4E1
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Discrete Semiconductor Products
T508N12TOF
MUR20040
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
View more