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MZ0912B100Y

Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization realizes very stable characteristics and excellent lifetime· Multicell geometry improves power sharing a...

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MZ0912B100Y: Features: · Interdigitated structure provides high emitter efficiency· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR· Gold metallization real...

MZ0912B100Y Data Sheet

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Part Number:
MZ0912B100Y
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/31

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Product Details

Description



Features:

· Interdigitated structure provides high emitter efficiency
· Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
· Gold metallization realizes very stable characteristics and excellent lifetime
· Multicell geometry improves power sharing and low thermal resistance
· Input and output matching cell allows an easier design of circuits.


Application

· Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 65 V
VCES collector-emitter voltage RBE = 0 - 60 V
VCEO collector-emitter voltage open base - 20 V
VEBO emitter-base voltage open collector - 3 V
IC collector current(DC) tp 10 ms; 10% - 6 A
Ptot total power dissipation
(peak power)		 tp 10 ms; 10%;Tmb = 75 - 290 W
Tstg storage temperature   -65 +200
Tj operating junction temperature   - 200
Tsld soldering temperature up to 0.2 mm from ceramic;
t 10 s 		- 235



Description

NPN silicon planar epitaxial microwave power transistors. The MZ0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs.

The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.




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