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NDS351N/351, NDS352AP, NDS352AP / 352

NDS351N/351, NDS352AP, NDS352AP / 352 Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:SOT-23  D/C:08+

NDS352AP Picture

NDS351N/351, NDS352AP, NDS352AP / 352 Datasheet download

Five Points

Part Number: NDS352AP

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: SOT-23

D/C: 08+

Description: MOSFET P-CH 30V 900MA SSOT3

 

 
 
 
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About NDS02ZG-M6

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Datasheet: NDS02ZG-M6

File Size: 320036 KB

Manufacturer: POWER-ONE [Power-One]

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  • NDS352AP

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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
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    (14)

  • NDS352AP

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  • NDS352AP

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  • huandong electronics co.ltd   China
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  • ASK SEMICONDUCTOR LTD   China
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  • NDS352AP

  • D/C: 01+&   Adddate: 2024-05-04
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  • TCLT Co.,LTD.   China
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About NDS352AP

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Datasheet: NDS352AP

File Size: 80460 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • NDS0605

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  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
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    Fax: 86-0755-83210427
    (0)

  • NDS0605

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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
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    Fax: 86-755-83206987
    (14)

  • NDS0605-NL

  • Vendor: Fairchild Pack: SOT D/C: 06+& Qty: 9000  Adddate: 2024-05-04
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  • NDS0605-NL

  • Vendor: Fairchild Pack: SOT D/C: 07+& Qty: 30000  Adddate: 2024-05-04
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
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    Fax: 0086-755-61174144
    (11)

  • NDS0610

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  • ALCON TECHNOLOGY CO., LTD.   China
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About NDS02ZG-M6

PDF/DataSheet Download

Datasheet: NDS02ZG-M6

File Size: 320036 KB

Manufacturer: POWER-ONE [Power-One]

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NDS352AP Parameters

Technical/Catalog InformationNDS352AP
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C900mA
Rds On (Max) @ Id, Vgs300 mOhm @ 1A, 10V
Input Capacitance (Ciss) @ Vds 135pF @ 15V
Power - Max460mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs3nC @ 4.5V
Package / CaseSSOT-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS352AP
NDS352AP
NDS352APDKR ND
NDS352APDKRND
NDS352APDKR

NDS352AP General Description

These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

NDS352AP Maximum Ratings

Symbol
Parameter
NDS8410
Units
VDSS
VGSS
 Drain-Source Voltage
Gate-Source Voltage
-30
±20
±0.9
±10
0.5
0.46
-55 to 150
V
V
A

W

°C
ID
 Drain Current Continuous
Pulsed		 (Note 1a)
PD
 Maximum Power Dissipation (Note 1a)
(Note 1b)
TJ,TSTG Operating and Storage Junction Temperature Range

NDS352AP Features

·-0.9 A, -30 V. RDS(ON) = 0.5 W @ VGS = -4.5 VRDS(ON) = 0.3 W @ VGS = -10 V.
·Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
·High density cell design for extremely low RDS(ON).
·Exceptional on-resistance and maximum DC current capability.

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