NDS331N

MOSFET N-Ch LL FET Enhancement Mode

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NDS331N: MOSFET N-Ch LL FET Enhancement Mode

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US $ .1~.31 / Piece | Get Latest Price
Part Number:
NDS331N
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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Upload time: 2024/4/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 0.21 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SuperSOT Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : 8 V
Package / Case : SuperSOT
Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 0.21 Ohms


Features:

`1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 V
                     RDS(ON) = 0.16 @ VGS= 4.5 V.
`Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermaland electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.



Pinout

  Connection Diagram


Specifications

Symbol Parameter NDS331N Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage - Continuous 8 V
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
1.3 A
10
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
0.5 W
0.46
TJ,TSTG Operating and Storage Temperature Range -55 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
250 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 75 /W



Description

These N-Channel logic level enhancement mode power field effect transistors NDS331N are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS331N is particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.




Parameters:

Technical/Catalog InformationNDS331N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.3A
Rds On (Max) @ Id, Vgs160 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 162pF @ 10V
Power - Max460mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs5nC @ 4.5V
Package / CaseSuperSOT?-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS331N
NDS331N
NDS331NDKR ND
NDS331NDKRND
NDS331NDKR



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