NDS332P

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 8 V
Resistance Drain-Source RDS (on) : 0.35 Ohms
Package / Case : SuperSOT
Continuous Drain Current : 1 A


Features:

`-1 A, -20 V, R<sub>DS(ON)</sub> = 0.41 @ V<sub>GS</sub>= -2.7 V R<sub>DS(ON)</sub> = 0.3 @ V<sub>GS</sub> = -4.5 V.
`Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.0V.
`Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
`High density cell design for extremely low R_DS(ON).
`Exceptional on-resistance and maximum DC current capability.
`Compact industry standard SOT-23 surface Mount package.


Specifications

Symbol	Parameter		NDS332P	Units
VDSS VGSS	Drain-Source Voltage Gate-Source Voltage - Continuous		-20 ±8 -1 -10 0.5 0.46 -55 to 150	V V A W °C
ID	Drain Current - Continuous - Pulsed	(Note 1a)
PD	Maximum Power Dissipation	(Note 1a) (Note 1b)
TJ,TSTG	Operating and Storage Temperature Range

THERMAL CHARACTERISTICS

RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

250 75

°C/W °C/W

Description

These P-Channel logic level enhancement mode power field effect transistors NDS332P are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. NDS332P is particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Parameters:

Technical/Catalog Information	NDS332P
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	1A
Rds On (Max) @ Id, Vgs	300 mOhm @ 1.1A, 4.5V
Input Capacitance (Ciss) @ Vds	195pF @ 10V
Power - Max	460mW
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	5nC @ 4.5V
Package / Case	SSOT-3
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDS332P NDS332P NDS332PDKR ND NDS332PDKRND NDS332PDKR