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This N-Channel Logic Level MOSFET is producedusing Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance totransients are needed.
NDS9410A Maximum Ratings
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current Continuous (Note 1a) Pulsed
7.3
A
20
PD
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c)
2.5
W
1.2
1.0
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
NDS9410A Features
• 7.3 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V RDS(ON) = 42 m @ VGS = 4.5 V • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package.