MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SMD-8 D/C:08+
NDS9933-NL, NDS9935A, NDS9936 Datasheet download
Category: Discrete Semiconductor Products
MFG: Fairchild Semiconductor (VA)
Package Cooled: SMD-8
D/C: 08+
Description: MOSFET 2N-CH 30V 5A 8-SOIC
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PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS02ZG-M6
File Size: 320036 KB
Manufacturer: POWER-ONE [Power-One]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDS9936
File Size: 352083 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | NDS9936 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 50 mOhm @ 5A, 10V |
| Input Capacitance (Ciss) @ Vds | 525pF @ 15V |
| Power - Max | 900mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | SO-8 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NDS9936 NDS9936 NDS9936DKR ND NDS9936DKRND NDS9936DKR |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC/DC conversion, disk drive motor control, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
|
Symbol |
Parameter |
NDS9936 |
Units | |
|
VDSS VGSS |
Drain-Source Voltage Gate-Source Voltage |
30 ± 20 ± 5.0 ± 4.0 ± 40 2 1.6 1 0.9 -55 to 150 |
V V A W °C | |
|
ID |
Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 70°C - Pulsed @ TA = 25°C |
(Note 1a) (Note 1a) | ||
|
PD |
Power Dissipation for Dual Operation Power Dissipation for Single Operation |
(Note 1a) (Note 1b) (Note 1c) | ||
| TJ,TSTG | Operating and Storage Junction Temperature Range | |||
| RJA RJC |
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case |
(Note 1a) (Note 1) |
78 40 |
°C/W °C/W |
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