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NE46134-T1-AZ, NE461M02, NE46234

Table of contents:
Info of NE46134-T1-AZ
Info of NE461M02
Info of NE46234

NE46134-T1-AZ, NE461M02, NE46234 Selling Leads, Datasheet

MFG:NEC (VA) Category:Discrete Semiconductor Products Package Cooled:SOT-89 D/C:09+

NE46134-T1-AZ, NE461M02, NE46234 Datasheet download

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Part Number: NE46134-T1-AZ

Category: Discrete Semiconductor Products

MFG: NEC (VA)

Package Cooled: SOT-89

D/C: 09+

Description: TRANSISTOR NPN 1GHZ SOT-89

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NE46134-T1-AZ Parameters

Technical/Catalog Information	NE46134-T1-AZ
Vendor	NEC (VA)
Category	Discrete Semiconductor Products
Frequency - Transition	5.5GHz
Noise Figure (dB Typ @ f)	1.5dB ~ 2dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)	250mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Gain	-
Power - Max	2W
Compression Point (P1dB)	27.5dBm
Package / Case	SOT-89
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NE46134 T1 AZ NE46134T1AZ NE46134 AZDKR ND NE46134AZDKRND NE46134-AZDKR

NE461M02 General Description

The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the VHF to UHF band and is suitable for CATV and other telecommunication applications.

NE461M02 Maximum Ratings

SYMBOLS	PARAMETERS	UNITS	RATINGS
V_CBO	Collector to Base Voltage	V	30
V_CEO	Collector to Emitter Voltage	V	15
V_EBO	Emitter to Base Voltage	V	3.0
I_C	Collector Current	mA	250
P_T	Total Power Dissipation2	W	2.0
T_J	Junction Temperature		150
T_STG	Storage Temperature		-65 to +150

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Device mounted on 0.7 mm x 16 cm2 double-sided ceramic substrate (copper plating).

NE461M02 Features

• HIGH COLLECTOR CURRENT:
250 mA MAX
• NEW HIGH GAIN POWER MINI-MOLD PACKAGE
(SOT-89 TYPE)
• HIGH OUTPUT POWER AT 1 dB COMPRESSION:
27 dBm TYP at 1 GHz
• HIGH IP3:
37 dBm TYP at 1 GHz

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