NE425S01

Mounting Style : SMD/SMT
Technology Type : HEMT
Gain : 12 dB
Frequency : 12 GHz
Noise Figure : 0.6 dB
Gate-Source Breakdown Voltage : - 3 V
Drain Source Voltage VDS : 4 V
Maximum Operating Temperature : + 125 C
Power Dissipation : 165 mW
Forward Transconductance gFS (Max / Min) : 60 mS
Package / Case : S0-1
Continuous Drain Current : 90 mA


Features:

• Super Low Noise Figure & High Associated Gain
  NF = 0.60 dB TYP, Ga = 12.0 dB TYP. at f = 12 GHz
• Gate Length: Lg 0.20 m
• Gate Width : Wg = 200 m


Specifications

Drain to Source Voltage	VDS	4.0	V
Gate to Source Voltage	VGS	- 3.0	V
Drain Current	ID	IDSS	mA
Gate Current	IG	100	A
Total Power Dissipation	Ptot	165	mW
Channel Temperature	Tch	125
Storage Temperature	Tstg	- 65 to +125

Description

The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems.