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NLAS4459, NLAS44599, NLAS44599D

NLAS4459, NLAS44599, NLAS44599D Selling Leads, Datasheet

MFG:20000  Package Cooled:ONSEMI  D/C:2006

NLAS4459, NLAS44599, NLAS44599D Picture

NLAS4459, NLAS44599, NLAS44599D Datasheet download

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Part Number: NLAS4459

 

MFG: 20000

Package Cooled: ONSEMI

D/C: 2006

 

 

 
 
 
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  • NLAS44599DTR2G

  • Vendor: ON Pack: TSSOP D/C: 08+& Qty: 3  Adddate: 2024-05-07
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  • Wangke Trading   China
    Contact: Mr.ZhuangtaoHu  
    Tel: 0086--13603044919
    Fax: 0086-755-61306478
    (0)
  • NLAS44599MNR2

  • Vendor: ON D/C: 06+& Qty: 29500  Adddate: 2024-05-07
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About NLAS44599

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Datasheet: NLAS44599

File Size: 99827 KB

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  • NLAS44599DTR2G

  • Vendor: ON Pack: TSSOP D/C: 08+& Qty: 3  Adddate: 2024-05-07
  • Inquire Now
  • Wangke Trading   China
    Contact: Mr.ZhuangtaoHu  
    Tel: 0086--13603044919
    Fax: 0086-755-61306478
    (0)
  • NLAS44599MNR2

  • Vendor: ON D/C: 06+& Qty: 29500  Adddate: 2024-05-07
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)

About NLAS44599

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Datasheet: NLAS44599

File Size: 99827 KB

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NLAS44599D Suppliers

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  • NLAS44599DTR2G

  • Vendor: ON Pack: TSSOP D/C: 08+& Qty: 3  Adddate: 2024-05-07
  • Inquire Now
  • Wangke Trading   China
    Contact: Mr.ZhuangtaoHu  
    Tel: 0086--13603044919
    Fax: 0086-755-61306478
    (0)

About NLAS44599DT

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Datasheet: NLAS44599DT

File Size: 97011 KB

Manufacturer: ONSEMI [ON Semiconductor]

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NLAS44599 General Description

The NLAS44599 is an advanced dual−independent CMOS double pole−double throw (DPDT) analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON resistances while maintaining CMOS low power dissipation. This DPDT controls analog and digital voltages that may vary across the full power−supply range (from VCC to GND).

The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical CMOS analog switches.

The channel select input is compatible with standard CMOS outputs. The channel select input structure provides protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc.

The NLAS44599 can also be used as a quad 2−to−1 multiplexer− demultiplexer analog switch with two Select pins that each controls two multiplexer−demultiplexers.

NLAS44599 Maximum Ratings

Symbol Parameter Value Unit
VCC Positive DC Supply Voltage -0.5 to +7.0 V
VIS Analog Input Voltage (VNO or VCOM) -0.5 VISVCC +0.5 V
VIN Digital Select Input Voltage -0.5 VI + 0.5 V
IIK DC Current, Into or Out of Any Pin ±50 mA
PD Power Dissipation in Still Air QFN−16
TSSOP−16
800
450

mA
TSTG Storage Temperature Range -65 to +150 °C
TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
TJ Junction Temperature Under Bias +150 °C
MSL Moisture Sensitivity Level 1  
FR Flammability Rating Oxygen Index: 28 to 34 UL 94−V0 (0.125 in)  
VESD ESD Withstand Voltage Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
2000
200
1000
V
ILatchUp LatchUp Performance Above VCC and Below GND at 85C (Note 5) ±300 mA
JA Thermal Resistance SOT- 353 (Note 1)
SOT- 553
80
164
°C/W

Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute−maximum−rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions.
1. Tested to EIA/JESD22−A114−A.
2. Tested to EIA/JESD22−A115−A.
3. Tested to JESD22−C101−A.
4. Tested to EIA/JESD78.

NLAS44599 Features

• Channel Select Input Over−Voltage Tolerant to 5.5 V
• Fast Switching and Propagation Speeds
• Break−Before−Make Circuitry
• Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C
• Diode Protection Provided on Channel Select Input
• Improved Linearity and Lower ON Resistance over Input Voltage
• Latch−up Performance Exceeds 300 mA
• ESD Performance: Human Body Model; > 2000 V, Machine Model; > 200 V
• Chip Complexity: 158 FETs

NLAS44599 Connection Diagram

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