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NTHS2101P, NTHS2101PTI, NTHS4166NT1G

NTHS2101P, NTHS2101PTI, NTHS4166NT1G Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:SOT23-8  D/C:07+

NTHS2101P, NTHS2101PTI, NTHS4166NT1G Picture

NTHS2101P, NTHS2101PTI, NTHS4166NT1G Datasheet download

Five Points

Part Number: NTHS2101P

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: SOT23-8

D/C: 07+

Description: MOSFET N-CH SGL 30V 8.2A CHIPFET

 

 
 
 
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About NTHS2101P

PDF/DataSheet Download

Datasheet: NTHS2101P

File Size: 54903 KB

Manufacturer: ON SEMICONDUCTOR

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About NTH030A3

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Datasheet: NTH030A3

File Size: 123946 KB

Manufacturer: ETC [ETC]

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About NTH030A3

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Datasheet: NTH030A3

File Size: 123946 KB

Manufacturer: ETC [ETC]

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NTHS2101P Maximum Ratings

Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
VDSS
VGS
−8.0
±8.0
Vdc
Vdc
Drain Current − Continuous
− 5 seconds
ID
−5.4
−7.5
A
Total Power Dissipation
Continuous @ TA = 25°C
(5 sec) @ TA = 25°C
Continuous @ 85°C
(5 sec) @ 85°C
PD



1.3
2.5
0.7
1.3
W
Continuous Source Current
Is
−1.1
A
Thermal Resistance (Note 1)
Junction−to−Ambient, 5 sec
Junction−to−Ambient, Continuous
RJA
50
95
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260
°C

NTHS2101P Features

• Offers an Ultra Low RDS(on) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6 making it an Ideal Device for Applications where Board Space is at a Premium
• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin Environments such as Portable Electronics
• Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the Operating Voltage used in many Logic ICs in Portable Electronics
• Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required
• Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology
• Pb−Free Package is Available

NTHS2101P Typical Application

• Optimized for Battery and Load Management Applications in Portable Equipment such as MP3 Players, Cell Phones, Digital Cameras, Personal Digital Assistant and other Portable Applications
• Charge Control in Battery Chargers
• Buck and Boost Converters

NTHS2101P Connection Diagram

NTHS4166NT1G Parameters

Technical/Catalog InformationNTHS4166NT1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C4.9A
Rds On (Max) @ Id, Vgs22 mOhm @ 4.9A, 10V
Input Capacitance (Ciss) @ Vds 900pF @ 15V
Power - Max800mW
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs9.2nC @ 4.5V
Package / CaseChipFET
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHS4166NT1G
NTHS4166NT1G

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