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NTHD2102P

Features: • Offers an Ultra Low RDS(on) Solution in the ChipFET Package• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6 making it an Ideal Device for Applications where Board Space is at a Premium• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely...

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SeekIC No. : 004436663 Detail

NTHD2102P: Features: • Offers an Ultra Low RDS(on) Solution in the ChipFET Package• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6 making it an Ideal Device for Applications wher...

NTHD2102P Data Sheet

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Part Number:
NTHD2102P
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Offers an Ultra Low RDS(on) Solution in the ChipFET Package
• Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
  making it an Ideal Device for Applications where Board Space is at a Premium
• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
  Environments such as Portable Electronics
• Designed to Provide Low RDS(on) at Gate Voltage as Low as 1.8 V, the
  Operating Voltage used in many Logic ICs in Portable Electronics
• Simplifies Circuit Design since Additional Boost Circuits for Gate
  Voltages are not Required
• Operated at Standard Logic Level Gate Drive, Facilitating Future
  Migration to Lower Levels using the same Basic Topology
• Pb−Free Package is Available


Application

• Optimized for Battery and Load Management Applications in
  Portable Equipment such as MP3 Players, Cell Phones, Digital
  Cameras, Personal Digital Assistant and other Portable Applications
• Charge Control in Battery Chargers
• Buck and Boost Converters


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS −8.0 V
Gate−to−Source Voltage − Continuous VGS ±8.0 V
Drain Current − Continuous
− 5 seconds		 lD
lD		 −3.4
−4.6		 A
Total Power Dissipation
Continuous @ TA = 25°C
(5 sec) @ TA = 25°C
Continuous @ 85°C
(5 sec) @ 85°C		 PD 1.1
2.1
0.6
1.1		 W
Operating Junction and Storage Temperature
Range		 TJ, Tstg −55 to
+150		 °C
Continuous Source Current
(Diode Conduction)		 ls −1.1 A
Thermal Resistance (Note 1)
Junction−to−Ambient, 5 sec
Junction−to−Ambient, Continuous		 RJA
RJA		 60
113		 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds		 TL

260

 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).


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