NTHD2110TT1G

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 12V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Packaging: Tape & Reel (TR)
Power - Max: 1.1W
Current - Continuous Drain (Id) @ 25° C: 4.5A
Gate Charge (Qg) @ Vgs: 14nC @ 4.5V
Package / Case: 8-SMD, Flat Lead
Manufacturer: ON Semiconductor
Supplier Device Package: ChipFET?
Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.4A, 4.5V
Input Capacitance (Ciss) @ Vds: 1072pF @ 6V


Parameters:

Technical/Catalog Information	NTHD2110TT1G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25° C	4.5A
Rds On (Max) @ Id, Vgs	40 mOhm @ 6.4A, 4.5V
Input Capacitance (Ciss) @ Vds	1072pF @ 6V
Power - Max	1.1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	14nC @ 4.5V
Package / Case	8-ChipFET?
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTHD2110TT1G NTHD2110TT1G