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NTHS5441/A3L, NTHS5443, NTHS5443T1G

NTHS5441/A3L, NTHS5443, NTHS5443T1G Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:SOP-8  D/C:09+

NTHS5441/A3L, NTHS5443, NTHS5443T1G Picture

NTHS5441/A3L, NTHS5443, NTHS5443T1G Datasheet download

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Part Number: NTHS5441/A3L

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: SOP-8

D/C: 09+

Description: MOSFET P-CH 20V 3.6A CHIPFET

 

 
 
 
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About NTH030A3

PDF/DataSheet Download

Datasheet: NTH030A3

File Size: 123946 KB

Manufacturer: ETC [ETC]

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About NTHS5443T1

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Datasheet: NTHS5443T1

File Size: 70394 KB

Manufacturer: ONSEMI [ON Semiconductor]

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About NTHS5443T1G

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Datasheet: NTHS5443T1G

File Size: 70394 KB

Manufacturer: ONSEMI [ON Semiconductor]

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NTHS5443 Maximum Ratings

Rating
Symbol
5 secs
Steady
State
Unit
Drain−Source Voltage
VDS
−20
V
Gate−Source Voltage
VGS
±12
V
Continuous Drain Current
(TJ = 150°C) (Note 1)
TA = 25°C
TA = 85°C
ID
−4.9
−3.5
−3.6
−2.6
A
Pulsed Drain Current
IDM
±15
A
Continuous Source Current (Note 1)
IS
−4.9
−3.6
A
Maximum Power Dissipation (Note 1)
TA = 25°C
TA = 85°C
PD
2.5
1.3
1.3
0.7
W
Operating Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).

NTHS5443 Features

• Low RDS(on) for Higher Efficiency
• Logic Level Gate Drive
• Miniature ChipFET Surface Mount Package Saves Board Space
• Pb−Free Package is Available

NTHS5443 Typical Application

• Power Management in Portable and Battery−Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards

NTHS5443 Connection Diagram

NTHS5443T1G Parameters

Technical/Catalog InformationNTHS5443T1G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C3.6A
Rds On (Max) @ Id, Vgs65 mOhm @ 3.6A, 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max1.3W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Package / Case8-ChipFET?
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTHS5443T1G
NTHS5443T1G
NTHS5443T1GOSTR ND
NTHS5443T1GOSTRND
NTHS5443T1GOSTR

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