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NTMS10P02G, NTMS10P02R2, NTMS10P02R2G

Table of contents:
Info of NTMS10P02G
Info of NTMS10P02R2
Info of NTMS10P02R2G

NTMS10P02G, NTMS10P02R2, NTMS10P02R2G Selling Leads, Datasheet

MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:ON D/C:07+

NTMS10P02G, NTMS10P02R2, NTMS10P02R2G Datasheet download

Five Points

Part Number: NTMS10P02R2

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: ON

D/C: 07+

Description: MOSFET P-CH 20V 10A 8-SOIC

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NTMS10P02R2 Parameters

Technical/Catalog Information	NTMS10P02R2
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	8.8A
Rds On (Max) @ Id, Vgs	14 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	3640pF @ 16V
Power - Max	1.6W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	70nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NTMS10P02R2 NTMS10P02R2 NTMS10P02R2OSCT ND NTMS10P02R2OSCTND NTMS10P02R2OSCT

NTMS10P02R2 Maximum Ratings

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	V_DSS	-20	Vdc
GatetoSource Voltage - Continuous	V_DGR	±12	Vdc
Thermal Resistance - JunctiontoAmbient (1.) Total Power Dissipation @ TA = 25°C ^(1.) Continuous Drain Current @ 25°C ^(1.) Continuous Drain Current @ 70°C ^(1.)Maximum Operating Power Dissipation ^(2.) Maximum Operating Drain Current ^(2.) Pulsed Drain Current ^(5.)	R_JAP_D I_D I_DP_DI_DI_DM	50 2.5 10 8.0 0.6 5.5 50	Vdc
Thermal Resistance - JunctiontoAmbient ^(4.) Total Power Dissipation @ T_A = 25°C ^(3.) Continuous Drain Current @ 25°C ^(3.)Continuous Drain Current @ 70°C ^(3.)Maximum Operating Power Dissipation ^(4.)Maximum Operating Drain Current ^(4.)Pulsed Drain Current ^(5.)	R_JAP_DI_D I_D P_DI_DI_DM	80 1.6 8.8 6.4 0.4 4.5 44	Adc
Operating and Storage Temperature Range	T_J, T_stg	−55 to+150	°C
Single Drain−to−Source Avalanche Energy − Starting T_J = 25°C (V_DD = 100 Vdc, VGS = 10 Vdc, IL(pk) = 21.6 A, L = 3.0 mH, RG = 25 W)	E_AS	500	mJ
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds	T_L	260	°C

1. Mounted onto a 2, square FR4 Board (1, sq. Cu 0.06, thick single sided), t = 10 seconds.
2. Mounted onto a 2, square FR4 Board (1, sq. Cu 0.06, thick single sided), t = steady state.
3. Minimum FR4 or G10 PCB, t = 10 seconds.
4. Minimum FR4 or G10 PCB, t = steady state.
5. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2%.

NTMS10P02R2 Features

• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature SO8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• SO8 Mounting Information Provided

NTMS10P02R2 Typical Application

• Power Management in Portable and BatteryPowered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards

NTMS10P02R2 Connection Diagram

NTMS10P02R2G Parameters

Technical/Catalog Information	NTMS10P02R2G
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	14 mOhm @ 10A, 4.5V
Input Capacitance (Ciss) @ Vds	3640pF @ 16V
Power - Max	2.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	70nC @ 4.5V
Package / Case	8-SOIC (3.9mm Width)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NTMS10P02R2G NTMS10P02R2G NTMS10P02R2GOSTR ND NTMS10P02R2GOSTRND NTMS10P02R2GOSTR

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