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NTMD3N08LR2G, NTMD3P03, NTMD3P03R2

NTMD3N08LR2G, NTMD3P03, NTMD3P03R2 Selling Leads, Datasheet

MFG:ON  Package Cooled:SOP8  D/C:08+

NTMD3N08LR2G, NTMD3P03, NTMD3P03R2 Picture

NTMD3N08LR2G, NTMD3P03, NTMD3P03R2 Datasheet download

Five Points

Part Number: NTMD3N08LR2G

 

MFG: ON

Package Cooled: SOP8

D/C: 08+

 

 

 
 
 
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  • NTMD3P03R2G

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About NTMC1300R2

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Datasheet: NTMC1300R2

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Manufacturer: ON SEMICONDUCTOR

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  • NTMD2P01R2

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  • NTMD3N08LR2

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  • NTMD3P03R2G

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About NTMD3P03R2

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Datasheet: NTMD3P03R2

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Manufacturer: ONSEMI [ON Semiconductor]

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  • NTMD2C02R2G

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  • NTMD2P01R2

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  • NTMD2P01R2G

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  • NTMD3N08LR2

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  • NTMD3P03R2G

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    (11)

About NTMD3P03R2

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Datasheet: NTMD3P03R2

File Size: 68240 KB

Manufacturer: ONSEMI [ON Semiconductor]

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NTMD3P03R2 Maximum Ratings

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS −30 V
Gate−to−Source Voltage − Continuous VGS ±20 V
Thermal Resistance −
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RJA
PD
ID
ID
IDM
171
0.73
−2.34
−1.87
−8.0
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RJA
PD
ID
ID
IDM
100
1.25
−3.05
−2.44
−12
°C/W
W
A
A
A
Thermal Resistance −
Junction−to−Ambient (Note 3)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ 25°C
Continuous Drain Current @ 70°C
Pulsed Drain Current (Note 4)
RJA
PD
ID
ID
IDM
62.5
2.0
−3.86
−3.1
−15
°C/W
W
A
A
A
Operating and Storage
Temperature Range
TJ, Tstg −55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −30 Vdc, VGS = −4.5 Vdc, Peak
IL = −7.5 Apk, L = 5 mH, RG = 25 W)
EAS 140 mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL 260 °C
1. Minimum FR−4 or G−10 PCB, t = Steady State.
2. Mounted onto a 2, square FR−4 Board (1, sq. 2 oz Cu 0.06, thick single sided), t = steady state.
3. Mounted onto a 2, square FR−4 Board (1, sq. 2 oz Cu 0.06, thick single sided), t 3 10 seconds.
4. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.

NTMD3P03R2 Features

• High Efficiency Components in a Dual SO−8 Package
• High Density Power MOSFET with Low RDS(on)
• Miniature SO−8 Surface Mount Package − Saves Board Space
• Diode Exhibits High Speed with Soft Recovery
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Mounting Information for the SO−8 Package is Provided

NTMD3P03R2 Connection Diagram

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